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IPC26N12N डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Infineon

भाग संख्या IPC26N12N
समारोह MOSFET
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IPC26N12N pdf
OptiMOS™3PowerMOSTransistorChip
IPC26N12N
1Description
•N-channelenhancementmode
•FordynamiccharacterizationrefertothedatasheetofIPP048N12N3G
•AQL0.65forvisualinspectionaccordingtofailurecatalogue
•ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C
•Diebond:solderedorglued
•Backsidemetallization:NiVsystem
•Frontsidemetallization:AlSisystem
•Passivation:nitride(onlyonedgestructure)
PowerMOSTransistorChip
Table1KeyPerformanceParameters
Parameter
Value
Unit
V(BR)DSS
RDS(on)
Die size
120
4.81)
6.6 x 3.96
V
m
mm2
Thickness
250
µm
Drain
Gate
Source
Type/OrderingCode
IPC26N12N
Package
Chip
Marking
not defined
RelatedLinks
-
2ElectricalCharacteristicsonWaferLevel
atTj=25°C,unlessotherwisespecified
Table2
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on- resistance
Reverse diode forward on-voltage
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
VSD
Min.
120
2
-
-
-
-
Values
Typ. Max.
--
-4
0.1 1
1 100
3.02) 1003)
1.0 1.2
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=244µA
µA VGS=0V,VDS=100V
nA VGS=20V,VDS=0V
mVGS=10V,ID=2.0A
V VGS=0V,IF=1A
1) packaged in a P-TO220-3 (see ref. product)
2)typicalbaredieRDS(on);VGS=10Vwhenusedwith3x500µmAl-wedgebonding
3) limited by wafer test-equipment
Final Data Sheet
2
Rev.2.5,2014-07-23

विन्यास 4 पेज
डाउनलोड[ IPC26N12N Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IPC26N12NMOSFETInfineon
Infineon


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