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IPC045N25N3 डेटा पत्रक PDF( Datasheet डाउनलोड )


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भाग संख्या IPC045N25N3
समारोह MOSFET
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IPC045N25N3 pdf
OptiMOS™3PowerMOSTransistorChip
IPC045N25N3
1Description
•N-channelenhancementmode
•FordynamiccharacterizationrefertothedatasheetofBSZ16DN25NS3
G
•AQL0.65forvisualinspectionaccordingtofailurecatalogue
•ElectrostaticDischargeSensitiveDeviceaccordingtoJEDEC
•Diebond:solderedorglued
•Backsidemetallization:NiVsystem
•Frontsidemetallization:AlSisystem
•Passivation:nitride(onlyonedgestructure)
PowerMOSTransistorChip
Table1KeyPerformanceParameters
Parameter
Value
Unit
V(BR)DSS
RDS(on)
Die size
250
1651)
2.5 x 1.8
V
m
mm2
Thickness
250
µm
Drain
Gate
Source
Type/OrderingCode
IPC045N25N3
Package
Chip
Marking
not defined
RelatedLinks
-
2ElectricalCharacteristicsonWaferLevel
atTj=25°C,unlessotherwisespecified
Table2
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on- resistance
Reverse diode forward on-voltage
Avalanche energy, single pulse
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
VSD
EAS
Min.
250
2
-
-
-
-
-
Values
Typ. Max.
--
34
0.1 1
1 100
1462) 1653)
0.9 1.2
- 1204)
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=32µA
µA VGS=0V,VDS=200V
nA VGS=20V,VDS=0V
mVGS=10V,ID=5.5A
V VGS=0V,IF=10.9A
mJ ID =5.5 A, RGS =25
1) packaged in a S3O8 (see BSZ16DN25NS3 G)
2)typicalbaredieRDS(on);VGS=10V
3) limited by wafer test-equipment
4) Wafer tested. For general avalanche capability refer to the datasheet of BSZ16DN25NS3 G
Final Data Sheet
2
Rev.2.5,2014-07-23

विन्यास 4 पेज
डाउनलोड[ IPC045N25N3 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IPC045N25N3MOSFETInfineon
Infineon


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