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IPC022N03L3 डेटा पत्रक PDF( Datasheet डाउनलोड )


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भाग संख्या IPC022N03L3
समारोह MOSFET
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IPC022N03L3 pdf
OptiMOS™3PowerMOSTransistorChip
IPC022N03L3
1Description
•N-channelenhancementmode
•FordynamiccharacterizationrefertothedatasheetofIPD075N03LG
•AQL0.65forvisualinspectionaccordingtofailurecatalogue
•ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C
•Diebond:solderedorglued
•Sawnonfoil
•Backsidemetallization:NiVsystem
•Frontsidemetallization:AlCusystem
•Passivation:Nitride+Imide
PowerMOSTransistorChip
Table1KeyPerformanceParameters
Parameter
Value
Unit
V(BR)DSS
RDS(on)
Die size
30
7.51)
2.1 x 1.05
V
m
mm2
Thickness
175
µm
Drain
Gate
Source
Type/OrderingCode
IPC022N03L3
Package
Chip
Marking
not defined
RelatedLinks
-
2ElectricalCharacteristicsonWaferLevel
atTj=25°C,unlessotherwisespecified
Table2
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on- resistance
Reverse diode forward on-voltage
Internal gate resistance
Avalanche energy, single pulse
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
VSD
RG
EAS
Min.
30
1
-
-
-
-
-
-
Values
Typ. Max.
--
- 2.2
0.1 1
10 100
5.32) 503)
0.75 1.1
1.3 -
504) -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=250µA
µA VGS=0V,VDS=30V
nA VGS=20V,VDS=0V
mVGS=10V,ID=2.0A
V VGS=0V,IF=1A
-
mJ ID =12 A, RGS =25
1) packaged in a PG-TO252-3 (see ref. product)
2)typicalbaredieRDS(on);VGS=10Vwhenusedwith1x400µmAl-bondwire
3) limited by wafer test-equipment
4) Wafer tested. For general avalanche capability refer to the datasheet of IPD075N03L G
Final Data Sheet
2
Rev.2.5,2014-07-25

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डाउनलोड[ IPC022N03L3 Datasheet.PDF ]


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IPC022N03L3MOSFETInfineon
Infineon


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