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IPC045N10L3 डेटा पत्रक PDF( Datasheet डाउनलोड )


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भाग संख्या IPC045N10L3
समारोह MOSFET
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IPC045N10L3 pdf
OptiMOS™3PowerMOSTransistorChip
IPC045N10L3
1Description
•N-channelenhancementmode
•FordynamiccharacterizationrefertothedatasheetofBSZ150N10LS3G
•AQL0.65forvisualinspectionaccordingtofailurecatalogue
•ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C
•Diebond:solderedorglued
•Backsidemetallization:NiVsystem
•Frontsidemetallization:AlCusystem
•Passivation:nitride(onlyonedgestructure)
PowerMOSTransistorChip
Table1KeyPerformanceParameters
Parameter
Value
Unit
V(BR)DSS
RDS(on)
Die size
100
151)
2.5 x 1.8
V
m
mm2
Thickness
220
µm
Drain
Gate
Source
Type/OrderingCode
IPC045N10L3
Package
Chip
Marking
not defined
RelatedLinks
-
2ElectricalCharacteristicsonWaferLevel
atTj=25°C,unlessotherwisespecified
Table2
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on- resistance
Reverse diode forward on-voltage
Avalanche energy, single pulse
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
VSD
EAS
Min.
100
1.1
-
-
-
-
-
Values
Typ. Max.
--
1.7 2.1
0.01 1
1 100
162) 1003)
0.9 1.2
804) -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=33µA
µA VGS=0V,VDS=100V
nA VGS=20V,VDS=0V
mVGS=4.5V,ID=2.0A
V VGS=0V,IF=1A
mJ ID =20 A, RGS =25
1) packaged in a PG-TDSON-8 (see ref. product). Maximum RDS(on) at VGS=10V
2)typicalbaredieRDS(on);VGS=4.5V
3) limited by wafer test-equipment
4) Wafer tested. For general avalanche capability refer to the datasheet of BSZ150N10LS3 G
Final Data Sheet
2
Rev.2.5,2014-07-09

विन्यास 4 पेज
डाउनलोड[ IPC045N10L3 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IPC045N10L3MOSFETInfineon
Infineon


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