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IPC014N03L3 डेटा पत्रक PDF( Datasheet डाउनलोड )


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भाग संख्या IPC014N03L3
समारोह MOSFET
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IPC014N03L3 pdf
OptiMOS™3PowerMOSTransistorChip
IPC014N03L3
1Description
•N-channelenhancementmode
•FordynamiccharacterizationrefertothedatasheetofIPD135N03LG
•AQL0.65forvisualinspectionaccordingtofailurecatalogue
•ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C
•Diebond:solderedorglued
•Backsidemetallization:NiVsystem
•Frontsidemetallization:AlCusystem
•Passivation:nitride+imide
PowerMOSTransistorChip
Table1KeyPerformanceParameters
Parameter
Value
Unit
V(BR)DSS
RDS(on)
Die size
30
13.51)
1.64 x 0.845
V
m
mm2
Thickness
175
µm
Drain
Gate
Source
Type/OrderingCode
IPC014N03L3
Package
Chip
Marking
not defined
RelatedLinks
-
2ElectricalCharacteristicsonWaferLevel
atTj=25°C,unlessotherwisespecified
Table2
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on- resistance
Reverse diode forward on-voltage
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
VSD
Min.
30
1
-
-
-
-
Values
Typ. Max.
--
- 2.2
0.1 2
10 100
10.32) 503)
0.86 1.1
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=250µA
µA VGS=0V,VDS=30V
nA VGS=20V,VDS=0V
mVGS=10V,ID=2.0A
V VGS=0V,IF=1A
1) packaged in a PG-TO263-7 (see ref. product)
2)typicalbaredieRDS(on);VGS=10V,whenusedwith4x500µmAl-wedgedoublestitchbonding
3) limited by wafer test-equipment
Final Data Sheet
2
Rev.2.5,2014-10-03

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डाउनलोड[ IPC014N03L3 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IPC014N03L3MOSFETInfineon
Infineon


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