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IPD110N12N3G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Infineon

भाग संख्या IPD110N12N3G
समारोह MOSFET
मैन्युफैक्चरर्स Infineon 
लोगो Infineon लोगो 
पूर्व दर्शन
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<?=IPD110N12N3G?> डेटा पत्रक पीडीएफ

IPD110N12N3G pdf
OptiMOSTM3Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen free according to IEC61249-2-21 *
• Ideal for high-frequency switching and synchronous rectification
Type
IPS110N12N3 G IPD110N12N3 G
IPD110N12N3 G
IPS110N12N3 G
120 V
11 mΩ
75 A
Package
PG-TO251-3
PG-TO252-3
Marking
110N12N
110N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
Gate source voltage3)
E AS
V GS
I D=75 A, R GS=25 Ω
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
* Except package TO251-3
Rev. 2.4
page 1
Value
75
54
300
120
±20
136
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
2015-06-24

विन्यास 11 पेज
डाउनलोड[ IPD110N12N3G Datasheet.PDF ]


शेयर लिंक


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