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4N35-X डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Optocoupler / Phototransistor - Vishay

भाग संख्या 4N35-X
समारोह Optocoupler / Phototransistor
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=4N35-X?> डेटा पत्रक पीडीएफ

4N35-X pdf
www.vishay.com
4N35-X, 4N36-X, 4N37-X, 4N38
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
Forward current
Surge current
Power dissipation
OUTPUT
t 10 μs
VR 6
V
IF 60 mA
IFSM
2.5
A
Pdiss 70 mW
Collector emitter breakdown voltage
VCEO
70
V
Emitter base breakdown voltage
VEBO
7
V
Collector current
IC 50 mA
Collector peak current
tp/T = 0.5, tp 10 ms
ICM
100
mA
Output power dissipation
Pdiss 150 mW
COUPLER
Isolation test voltage
Creepage distance
t=1s
VISO
5000
7
VRMS
mm
Clearance distance
7 mm
Isolation thickness between emitter
and detector
0.4
mm
Comparative tracking index
DIN IEC 112/VDE 0303, part 1
175
Isolation resistance
Storage temperature
Operating temperature
Soldering temperature (1)
VIO = 500 V, Tamb = 25 °C
VIO = 500 V, Tamb = 100 °C
2 mm from case, 10 s
RIO
RIO
Tstg
Tamb
Tsld
1012
1011
- 55 to + 150
- 55 to + 100
260
Ω
Ω
°C
°C
°C
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
INPUT
Forward voltage (1)
Reverse current (1)
Capacitance
OUTPUT
IF = 10 mA
IF = 10 mA, Tamb = - 55 °C
VR = 6 V
VR = 0 V, f = 1 MHz
VF
VF 0.9
IR
CO
Collector emitter breakdown
voltage (1)
Emitter collector breakdown
voltage (1)
IC = 1 mA
IE = 100 μA
4N35
4N36
4N37
4N38
BVCEO
BVCEO
BVCEO
BVCEO
BVECO
30
30
30
80
7
Collector base breakdown
voltage (1)
IC = 100 μA, IB = 1 μA
4N35
4N36
4N37
4N38
BVCBO
BVCBO
BVCBO
BVCBO
70
70
70
80
TYP.
1.2
1.3
0.1
25
MAX.
1.5
1.7
10
UNIT
V
V
μA
pF
V
V
V
V
V
V
V
V
V
Rev. 1.8, 16-Jan-12
2 Document Number: 83717
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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