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8N70K-MT डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL POWER MOSFET - Unisonic Technologies

भाग संख्या 8N70K-MT
समारोह N-CHANNEL POWER MOSFET
मैन्युफैक्चरर्स Unisonic Technologies 
लोगो Unisonic Technologies लोगो 
पूर्व दर्शन
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<?=8N70K-MT?> डेटा पत्रक पीडीएफ

8N70K-MT pdf
8N70K-MT
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 700 V
Gate-Source Voltage
VGSS ±30 V
Drain Current
Continuous
TC=25°C
TC=100°C
ID
8A
4.8 A
Pulsed (Note 4)
IDM
32 A
Avalanche Current
Avalanche Energy
Repetitive (Note 3)
Single Pulsed (Note 3)
IAS
EAS
8A
300 mJ
Junction Temperature
Power Dissipation (TC=25°C)
TJ
+150
°C
PD 49 W
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 9.37mH, IAS = 8A, VDD = 50V, RG = 25, Starting TJ = 25°C
4. Limited by maximum junction temperature
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
Note: 3urface mounted on FR4 board t10sec
SYMBOL
θJA
θJC
RATINGS
62.5
2.55
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=700V, VGS=0V
VDS=560V, TC=125°С
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=4A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD =30V, ID =0.5A,
RG=25(Note 1, 2)
VDS=50V, VGS=10V,
ID=1.3A (Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
IS Integral reverse diode in the
ISM MOSFET
Drain-Source Diode Forward Voltage
VSD IS=8A, VGS=0V
Notes: 1. Essentially independent of operating temperature.
2. Pulse Test: Pulse width 300µs, Duty cycle 2%
MIN TYP MAX UNIT
700 V
1 µA
100 µA
+10 nA
-10 nA
2.0 4.0 V
1.4
1120
113
21
pF
pF
pF
82 ns
85 ns
125 ns
60 ns
26 nC
8 nC
6 nC
8A
32 A
1.4 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R205-034.B

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