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IDTF2255NLGK डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Voltage Variable RF Attenuator - Integrated Device Technology

भाग संख्या IDTF2255NLGK
समारोह Voltage Variable RF Attenuator
मैन्युफैक्चरर्स Integrated Device Technology 
लोगो Integrated Device Technology लोगो 
पूर्व दर्शन
1 Page
		
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IDTF2255NLGK pdf
Voltage Variable RF Attenuator
ABSOLUTE MAXIMUM RATINGS
Parameter / Condition
VDD to GND
VMODE to GND
VCTRL to GND
VDD = 0V to 5.25V
RF1, RF2 to GND
RF1 or RF2 Input Power applied for 24 hours maximum
(VDD applied @ 2GHz and Tc=+85°C)
RF1 or RF2 Continuous Operating Power
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature (soldering, 10s)
ESD VoltageHBM (Per ESD STM5.1-2007)
ESD Voltage CDM (Per ESD STM5.3.1-2009)
Symbol
VDD
VMODE
VCTRL
VRF
PMAX24
PMAX_OP
TJMAX
TST
TLEAD
VESDHBM
VESDCDM
IDTF2255NLGK
Datasheet
1MHz to 3000MHz
Min
Max
Units
-0.3 5.5 V
-0.3
Minimum ( VDD, 3.9 )
V
-0.3
Minimum ( VDD, 4.0 )
V
-0.3 0.3 V
30 dBm
See Figure 1
dBm
+150
°C
-65
+150
°C
+260
°C
Class 2
Class C3
FIGURE 1: MAXIMUM OPERATING RF INPUT POWERS VS. RF FREQUENCY
Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at
these or any other conditions above those indicated in the operational section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL AND MOISTURE CHARACTERISTICS
ΘJA (Junction Ambient)
ΘJC (Junction Case) The Case is defined as the exposed paddle
Moisture Sensitivity Rating (Per J-STD-020)
80.6°C/W
5.1°C/W
MSL 1
© 2018 Integrated Device Technology, Inc.
2
Rev 2, February 9, 2018

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भाग संख्याविवरणविनिर्माण
IDTF2255NLGKVoltage Variable RF AttenuatorIntegrated Device Technology
Integrated Device Technology


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