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IRG7PG42UDPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG7PG42UDPBF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRG7PG42UDPBF pdf
  IRG7PG42UDPbF/IRG7PG42UD-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
1000
V VGE = 0V, IC = 100µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
VGE(th)/TJ
gfe
ICES
 
VFM
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
 
Diode Forward Voltage Drop
IGES Gate-to-Emitter Leakage Current
3.0
0.18
1.7
2.1
-14
32
4.4
1200
2.0
2.2
— V/°C VGE = 0V, IC = 2.0mA (25°C-150°C)
2.0 V IC = 30A, VGE = 15V, TJ = 25°C
 
IC = 30A, VGE = 15V, TJ = 150°C
6.0 V VCE = VGE, IC = 1.0mA
— mV/°C VCE=VGE, IC = 1.0mA (25°C - 150°C)
— S VCE = 50V, IC = 30A, PW = 80µs
100 µA VGE = 0V, VCE = 1000V
— VGE = 0V, VCE = 1000V, TJ = 150°C
2.4 V IF = 30A
— IF = 30A, TJ = 150°C
±100 nA VGE = ±30V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
Qge Gate-to-Emitter Charge
Qgc Gate-to-Collector Charge
— 157 —
IC = 30A
— 21 — nC  VGE = 15V
— 69 —  
VCC = 600V
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
— 2105 —
— 1182 —
— 3287 —
— 25 —
— 32 —
— 229 —
— 63 —
µJ IC = 30A, VCC = 600V, VGE = 15V
RG = 10, L = 200µH, TJ = 25°C
Energy losses include tail & diode
ns reverse recovery
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
— 2978 —
— 1968 —
µJ IC = 30A, VCC = 600V, VGE = 15V
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 4946 —
— 19 —
— 32 —
— 290 —
— 154 —
— 3338 —
— 124 —
— 75 —
RG = 10, L = 200µH, TJ = 150°C
Energy losses include tail & diode
ns reverse recovery
VGE = 0V
pF VCC = 30V
f = 1.0Mhz
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
TJ = 150°C, IC = 120A
VCC = 800V, Vp 1000V
Erec
trr
Irr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
— 1475 —
— 153 —
— 34 —
Rg = 10, VGE = +20V to 0V
µJ TJ = 150°C
ns VCC = 600V, IF = 30A
A Rg = 10L = 1.0mH
Notes:
VCC = 80% (VCES), VGE = 20V, L = 22µH, RG = 10.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Ris measured at TJ of approximately 90°C.
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note
that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
2 www.irf.com © 2014 International Rectifier
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April 29, 2014

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