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IRG7PG35U-EPbF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG7PG35U-EPbF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRG7PG35U-EPbF pdf
  IRG7PG35UPbF/IRG7PG35U-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
1000
V VGE = 0V, IC = 100µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
VGE(th)/TJ
gfe
ICES
 
Gate Threshold Voltage
Gate Threshold Voltage temp coefficient.
Forward Transconductance
Collector-to-Emitter Leakage Current
 
3.0
1.2
1.9
2.3
2.4
-16
22
2.0
2000
— V/°C VGE = 0V, IC = 1.0mA (25°C-150°C)
2.2 IC = 20A, VGE = 15V, TJ = 25°C
V   IC = 20A, VGE = 15V, TJ = 150°C
— IC = 20A, VGE = 15V, TJ = 175°C
6.0 V VCE = VGE, IC = 600µA
— mV/°C VCE = VGE, IC = 600µA (25°C-150°C)
— S VCE = 50V, IC = 20A, PW = 30µs
100 µA VGE = 0V, VCE = 1000V
— VGE = 0V, VCE = 1000V, TJ = 175°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±30V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector Charge
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
— 85 —
IC = 20A
— 15 — nC  VGE = 15V
— 35 —  
VCC = 600V
— 1060 —
— 620 — µJ IC = 20A, VCC = 600V, VGE = 15V
— 1680 —
— 30 —
RG = 10, L = 200µH, TJ = 25°C
Energy losses include tail & diode
— 15 — ns reverse recovery
— 160 —
Diode clamp the same as
— 80 —
IRG7PH35UDPbF
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 1880 —
— 1140 —
— 3020 —
— 25 —
— 20 —
— 200 —
— 200 —
— 1940 —
— 60 —
— 40 —
µJ IC = 20A, VCC = 600V, VGE = 15V
RG = 10, L = 200µH, TJ = 175°C
Energy losses include tail & diode
ns reverse recovery
Diode clamp the same as
IRG7PH35UDPbF
VGE = 0V
pF VCC = 30V
f = 1.0Mhz
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
TJ = 175°C, IC = 80A
VCC = 800V, Vp 1000V
Rg = 10, VGE = +20V to 0V
Notes:
VCC = 80% (VCES), VGE = 20V, RG = 10.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Ris measured at TJ of approximately 90°C.
2 www.irf.com © 2014 International Rectifier
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April 14, 2014

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