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IRG6S330UPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PDP TRENCH IGBT - International Rectifier

भाग संख्या IRG6S330UPBF
समारोह PDP TRENCH IGBT
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRG6S330UPBF?> डेटा पत्रक पीडीएफ

IRG6S330UPBF pdf
IRG6S330UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVCES
V(BR)ECS
∆ΒVCES/TJ
VCE(on)
VGE(th)
Collector-to-Emitter Breakdown Voltage 330
eEmitter-to-Collector Breakdown Voltage 30
Breakdown Voltage Temp. Coefficient
–––
–––
–––
Static Collector-to-Emitter Voltage
–––
–––
Gate Threshold Voltage
2.6
–––
–––
0.29
1.25
1.43
1.80
2.38
2.10
–––
–––
–––
–––
–––
–––
2.10
–––
–––
5.0
V VGE = 0V, ICE = 1 mA
V VGE = 0V, ICE = 1 A
V/°C Reference to 25°C, ICE = 1mA
eVGE = 15V, ICE = 25A
eVGE = 15V, ICE = 40A
eV VGE = 15V, ICE = 70A
eVGE = 15V, ICE = 120A
eVGE = 15V, ICE = 70A, TJ = 150°C
V VCE = VGE, ICE = 500µA
VGE(th)/TJ Gate Threshold Voltage Coefficient
ICES Collector-to-Emitter Leakage Current
IGES
gfe
Qg
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
tst
EPULSE
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Shoot Through Blocking Time
Energy per Pulse
ESD
Cies
Coes
Cres
LC
Human Body Model
Machine Model
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Collector Inductance
––– -12 ––– mV/°C
––– 2.0 20
VCE = 330V, VGE = 0V
–––
–––
10
40
–––
200
µA
VCE = 330V, VGE = 0V, TJ = 100°C
VCE = 330V, VGE = 0V, TJ = 125°C
––– 150 –––
VCE = 330V, VGE = 0V, TJ = 150°C
––– ––– 100 nA VGE = 30V
––– ––– -100
VGE = -30V
––– 94 ––– S VCE = 25V, ICE = 25A
e––– 86 ––– nC VCE = 200V, IC = 25A, VGE = 15V
––– 36 –––
––– 39 –––
––– 32 –––
––– 120 –––
––– 55 –––
IC = 25A, VCC = 196V
ns RG = 10, L=200µH, LS= 150nH
TJ = 25°C
––– 37 –––
––– 33 –––
––– 159 –––
––– 95 –––
IC = 25A, VCC = 196V
ns RG = 10, L=200µH, LS= 150nH
TJ = 150°C
100 ––– ––– ns VCC = 240V, VGE = 15V, RG= 5.1
––– 943 –––
L = 220nH, C= 0.40µF, VGE = 15V
µJ VCC = 240V, RG= 5.1Ω, TJ = 25°C
––– 1086 –––
L = 220nH, C= 0.40µF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 100°C
Class 2
(Per JEDEC standard JESD22-A114)
Class B
(Per EIA/JEDEC standard EIA/JESD22-A115)
––– 2275 –––
VGE = 0V
––– 108 ––– pF VCE = 30V
––– 75 –––
ƒ = 1.0MHz,
See Fig.13
––– 4.5 –––
Between lead,
nH 6mm (0.25in.)
LE Internal Emitter Inductance
––– 7.5 –––
from package
and center of die contact
Notes:
 Half sine wave with duty cycle = 0.05, ton=2µsec.
‚ Rθ is measured at TJ of approximately 90°C.
ƒ Pulse width 400µs; duty cycle 2%.
2
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