DataSheet.in

IRG6S320UPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PDP TRENCH IGBT - International Rectifier

भाग संख्या IRG6S320UPBF
समारोह PDP TRENCH IGBT
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IRG6S320UPBF?> डेटा पत्रक पीडीएफ

IRG6S320UPBF pdf
IRG6S320UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVCES
V(BR)ECS
∆ΒVCES/TJ
VCE(on)
Collector-to-Emitter Breakdown Voltage 330
eEmitter-to-Collector Breakdown Voltage 30
Breakdown Voltage Temp. Coefficient
–––
–––
–––
Static Collector-to-Emitter Voltage
–––
–––
–––
–––
0.30
1.20
1.45
1.95
2.20
2.26
–––
–––
–––
–––
1.65
–––
–––
–––
V VGE = 0V, ICE = 500µA
V VGE = 0V, ICE = 1 A
V/°C Reference to 25°C, ICE = 1mA
eVGE = 15V, ICE = 12A
eVGE = 15V, ICE = 24A
eV VGE = 15V, ICE = 48A
eVGE = 15V, ICE = 60A
eVGE = 15V, ICE = 48A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
2.6 ––– 5.0 V VCE = VGE, ICE = 250µA
VGE(th)/TJ Gate Threshold Voltage Coefficient
ICES Collector-to-Emitter Leakage Current
IGES Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
––– -10 ––– mV/°C
––– 1.0 10
VCE = 330V, VGE = 0V
–––
5.0
20
–––
100
µA
VCE = 330V, VGE = 0V, TJ = 100°C
VCE = 330V, VGE = 0V, TJ = 125°C
––– 75 –––
VCE = 330V, VGE = 0V, TJ = 150°C
––– ––– 100 nA VGE = 30V
––– ––– -100
VGE = -30V
gfe Forward Transconductance
Qg Total Gate Charge
e––– 28 ––– S VCE = 25V, ICE = 12A
––– 46 ––– nC VCE = 200V, IC = 12A, VGE = 15V
Qgc
td(on)
tr
td(off)
Gate-to-Collector Charge
Turn-On delay time
Rise time
Turn-Off delay time
––– 7.7 –––
––– 24 –––
––– 20 –––
––– 89 –––
IC = 12A, VCC = 196V
ns RG = 10, L=210µH, LS= 150nH
TJ = 25°C
tf
td(on)
Fall time
Turn-On delay time
––– 70 –––
––– 23 –––
IC = 12A, VCC = 196V
tr
td(off)
tf
tst
EPULSE
Rise time
Turn-Off delay time
Fall time
Shoot Through Blocking Time
Energy per Pulse
ESD
Human Body Model
Machine Model
––– 52 ––– ns RG = 10, L=200µH, LS= 150nH
––– 130 –––
TJ = 150°C
––– 140 –––
100 ––– –––
––– 240 –––
––– 280 –––
ns VCC = 240V, VGE = 15V, RG= 5.1
L = 220nH, C= 0.10µF, VGE = 15V
µJ VCC = 240V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.10µF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 100°C
Class 2
(Per JEDEC standard JESD22-A114)
Class B
(Per EIA/JEDEC standard EIA/JESD22-A115)
Cies Input Capacitance
Coes Output Capacitance
––– 1160 –––
––– 61 –––
VGE = 0V
pF VCE = 30V
Cres Reverse Transfer Capacitance
––– 38 –––
ƒ = 1.0MHz,
See Fig.13
LC Internal Collector Inductance
––– 5.0 –––
Between lead,
nH 6mm (0.25in.)
LE Internal Emitter Inductance
––– 13 –––
from package
and center of die contact
Notes:
 Half sine wave with duty cycle <= 0.05, ton=2µsec.
‚ Rθ is measured at TJ of approximately 90°C.
ƒ Pulse width 400µs; duty cycle 2%.
2
„ Packaging limitation for this device is 42A.
www.irf.com

विन्यास 8 पेज
डाउनलोड[ IRG6S320UPBF Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRG6S320UPBFPDP TRENCH IGBTInternational Rectifier
International Rectifier


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English