DataSheet.in

IRG6IC30UPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PDP TRENCH IGBT - International Rectifier

भाग संख्या IRG6IC30UPBF
समारोह PDP TRENCH IGBT
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IRG6IC30UPBF?> डेटा पत्रक पीडीएफ

IRG6IC30UPBF pdf
IRG6IC30UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVCES
V(BR)ECS
∆ΒVCES/TJ
VCE(on)
VGE(th)
Collector-to-Emitter Breakdown Voltage 600
eEmitter-to-Collector Breakdown Voltage 15
Breakdown Voltage Temp. Coefficient
–––
–––
–––
Static Collector-to-Emitter Voltage
Gate Threshold Voltage
–––
–––
–––
2.6
–––
–––
0.49
1.29
1.50
1.73
2.16
2.88
1.51
–––
–––
–––
–––
–––
1.92
–––
–––
–––
–––
5.0
V VGE = 0V, ICE = 1.0mA
V VGE = 0V, ICE = 1.0A
V/°C Reference to 25°C, ICE = 1mA
eVGE = 15V, ICE = 12A
eVGE = 15V, ICE = 25A
eV VGE = 15V, ICE = 40A
eVGE = 15V, ICE = 70A
eVGE = 15V, ICE = 120A
eVGE = 15V, ICE = 25A, TJ = 150°C
V VCE = VGE, ICE = 500µA
VGE(th)/TJ Gate Threshold Voltage Coefficient
ICES Collector-to-Emitter Leakage Current
––– -8.9 ––– mV/°C
––– 2.0 20
VCE = 600V, VGE = 0V
–––
–––
10
40
–––
100
µA
VCE = 600V, VGE = 0V, TJ = 100°C
VCE = 600V, VGE = 0V, TJ = 125°C
––– 150 –––
VCE = 600V, VGE = 0V, TJ = 150°C
IGES
Gate-to-Emitter Forward Leakage
––– ––– 100 nA VGE = 30V
Gate-to-Emitter Reverse Leakage
––– ––– -100
VGE = -30V
gfe Forward Transconductance
Qg Total Gate Charge
Qgc Gate-to-Collector Charge
td(on)
Turn-On delay time
tr Rise time
td(off)
Turn-Off delay time
tf Fall time
td(on)
Turn-On delay time
––– 32 –––
––– 79 –––
––– 30 –––
––– 20 –––
––– 16 –––
––– 160 –––
––– 120 –––
––– 18 –––
S VCE = 25V, ICE = 25A
enC VCE = 400V, IC = 25A, VGE = 15V
IC = 25A, VCC = 400V
ns RG = 10, L=200µH
TJ = 25°C
IC = 25A, VCC = 400V
tr
td(off)
Rise time
Turn-Off delay time
––– 17 –––
––– 190 –––
ns RG = 10, L=200µH
TJ = 150°C
tf
tst
EPULSE
Fall time
Shoot Through Blocking Time
Energy per Pulse
ESD
Cies
Coes
Human Body Model
Machine Model
Input Capacitance
Output Capacitance
––– 240 –––
100 ––– –––
––– 1020 –––
––– 1150 –––
ns VCC = 240V, VGE = 15V, RG= 5.1
L = 220nH, C= 0.40µF, VGE = 15V
µJ VCC = 240V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.40µF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 100°C
Class 2
(Per JEDEC standard JESD22-A114)
Class B
(Per EIA/JEDEC standard EIA/JESD22-A115)
––– 2390 –––
VGE = 0V
––– 85 ––– pF VCE = 30V
Cres Reverse Transfer Capacitance
LC Internal Collector Inductance
––– 58 –––
––– 4.5 –––
ƒ = 1.0MHz,
See Fig.13
Between lead,
nH 6mm (0.25in.)
LE Internal Emitter Inductance
––– 7.5 –––
from package
and center of die contact
Notes:
 Half sine wave with duty cycle <= 0.02, ton=1.0µsec.
‚ Rθ is measured at TJ of approximately 90°C.
ƒ Pulse width 400µs; duty cycle 2%.
2 www.irf.com

विन्यास 7 पेज
डाउनलोड[ IRG6IC30UPBF Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRG6IC30UPBFPDP TRENCH IGBTInternational Rectifier
International Rectifier


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English