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IRG6I320UPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PDP TRENCH IGBT - International Rectifier

भाग संख्या IRG6I320UPBF
समारोह PDP TRENCH IGBT
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRG6I320UPBF?> डेटा पत्रक पीडीएफ

IRG6I320UPBF pdf
IRG6I320UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVCES
V(BR)ECS
∆ΒVCES/TJ
VCE(on)
Collector-to-Emitter Breakdown Voltage 330
eEmitter-to-Collector Breakdown Voltage 30
Breakdown Voltage Temp. Coefficient
–––
–––
–––
Static Collector-to-Emitter Voltage
–––
–––
–––
–––
0.30
1.20
1.45
1.95
2.20
2.26
–––
–––
–––
–––
1.65
–––
–––
–––
V VGE = 0V, ICE = 500µA
V VGE = 0V, ICE = 1 A
V/°C Reference to 25°C, ICE = 1mA
eVGE = 15V, ICE = 12A
eVGE = 15V, ICE = 24A
eV VGE = 15V, ICE = 48A
eVGE = 15V, ICE = 60A
eVGE = 15V, ICE = 48A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
2.6 ––– 5.0 V VCE = VGE, ICE = 250µA
VGE(th)/TJ Gate Threshold Voltage Coefficient
ICES Collector-to-Emitter Leakage Current
––– -10 ––– mV/°C
––– 1.0 10
VCE = 330V, VGE = 0V
–––
5.0
20
–––
100
µA
VCE = 330V, VGE = 0V, TJ = 100°C
VCE = 330V, VGE = 0V, TJ = 125°C
––– 75 –––
VCE = 330V, VGE = 0V, TJ = 150°C
IGES
Gate-to-Emitter Forward Leakage
––– ––– 100 nA VGE = 30V
Gate-to-Emitter Reverse Leakage
––– ––– -100
VGE = -30V
gfe Forward Transconductance
Qg Total Gate Charge
e––– 28 ––– S VCE = 25V, ICE = 12A
––– 46 ––– nC VCE = 200V, IC = 12A, VGE = 15V
Qgc Gate-to-Collector Charge
––– 7.7 –––
td(on)
Turn-On delay time
––– 24 –––
IC = 12A, VCC = 196V
tr
td(off)
tf
td(on)
tr
td(off)
Rise time
Turn-Off delay time
Fall time
Turn-On delay time
Rise time
Turn-Off delay time
––– 20 –––
––– 89 –––
––– 70 –––
––– 23 –––
––– 52 –––
––– 130 –––
ns RG = 10, L=210µH, LS= 150nH
TJ = 25°C
IC = 12A, VCC = 196V
ns RG = 10, L=200µH, LS= 150nH
TJ = 150°C
tf
tst
EPULSE
Fall time
Shoot Through Blocking Time
Energy per Pulse
ESD
Human Body Model
Machine Model
––– 140 –––
100 ––– –––
––– 240 –––
––– 280 –––
ns VCC = 240V, VGE = 15V, RG= 5.1
L = 220nH, C= 0.10µF, VGE = 15V
µJ VCC = 240V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.10µF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 100°C
Class 2
(Per JEDEC standard JESD22-A114)
Class B
(Per EIA/JEDEC standard EIA/JESD22-A115)
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
LC Internal Collector Inductance
––– 1160 –––
––– 61 –––
––– 38 –––
––– 4.5 –––
VGE = 0V
pF VCE = 30V
ƒ = 1.0MHz,
Between lead,
See Fig.13
nH 6mm (0.25in.)
LE Internal Emitter Inductance
––– 7.5 –––
from package
and center of die contact
Notes:
 Half sine wave with duty cycle <= 0.05, ton=2µsec.
‚ Rθ is measured at TJ of approximately 90°C.
ƒ Pulse width 400µs; duty cycle 2%.
2
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