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IRG6B330UDPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PDP TRENCH IGBT - International Rectifier

भाग संख्या IRG6B330UDPBF
समारोह PDP TRENCH IGBT
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRG6B330UDPBF pdf
IRG6B330UDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVCES
Collector-to-Emitter Breakdown Voltage
∆ΒVCES/TJ Breakdown Voltage Temp. Coefficient
VCE(on)
Static Collector-to-Emitter Voltage
VGE(th)
VGE(th)/TJ
ICES
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
IGES
gfe
Qg
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
tst
EPULSE
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Shoot Through Blocking Time
Energy per Pulse
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
LC Internal Collector Inductance
330 ––– –––
V VGE = 0V, ICE = 1 mA
––– 0.34 ––– V/°C Reference to 25°C, ICE = 1mA
e––– 1.18 1.48
VGE = 15V, ICE = 25A
e––– 1.36 1.68
VGE = 15V, ICE = 40A
e––– 1.69 2.09
V VGE = 15V, ICE = 70A
e––– 2.26 2.76
VGE = 15V, ICE = 120A
––– 1.93 –––
VGE = 15V, ICE = 70A, TJ = 150°C
2.6 ––– 5.0
V VCE = VGE, ICE = 500µA
––– -11 ––– mV/°C
––– 2.0 25 µA VCE = 330V, VGE = 0V
––– 5.0 –––
VCE = 330V, VGE = 0V, TJ = 100°C
––– 100 –––
VCE = 330V, VGE = 0V, TJ = 150°C
––– ––– 100
nA VGE = 30V
––– ––– -100
VGE = -30V
e––– 50 –––
S VCE = 25V, ICE = 25A
––– 85 ––– nC VCE = 200V, IC = 25A, VGE = 15V
––– 31 –––
— 47 —
— 37 —
— 176 —
— 99 —
IC = 25A, VCC = 196V
ns RG = 10, L=200µH, LS= 200nH
TJ = 25°C
— 45 —
— 38 —
— 228 —
— 183 —
IC = 25A, VCC = 196V
ns RG = 10, L=200µH, LS= 200nH
TJ = 150°C
100 ––– –––
––– 834 –––
––– 985 –––
––– 2297 –––
––– 141 –––
––– 74 –––
ns VCC = 240V, VGE = 15V, RG= 5.1
L = 220nH, C= 0.40µF, VGE = 15V
µJ VCC = 240V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.40µF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 100°C
VGE = 0V
pF VCE = 30V
ƒ = 1.0MHz,
See Fig.13
––– 5.0 –––
Between lead,
nH 6mm (0.25in.)
LE Internal Emitter Inductance
––– 13 –––
from package
and center of die contact
Diode Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
IF(AV)
IFSM
VF
trr
Qrr
Irr
Average Forward Current at
TC=155°C
Non Repetitive Peak Surge Current
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak Recovery Current
––– ––– 8.0
––– ––– 100
––– 1.19 1.3
––– 0.94 1.0
––– 35
60
––– 43 –––
––– 67 –––
––– 60 –––
––– 210 –––
––– 2.8 –––
––– 6.3 –––
A
A TJ = 155°C, PW = 6.0ms half sine wave
V IF = 8A
IF = 8A, TJ = 150°C
ns IF = 1A, di/dt = -50A/µs, VR =30V
TJ = 25°C
TJ = 125°C
IF = 8A
nC TJ = 25°C
di/dt = 200A/µs
TJ = 125°C
VR = 200V
A TJ = 25°C
TJ = 125°C
Notes:
 Half sine wave with duty cycle = 0.1, ton=2µsec.
‚ Rθ is measured at TJ of approximately 90°C.
2
ƒ Pulse width 400µs; duty cycle 2%.
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