DataSheet.in

IRG4PH40UPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4PH40UPBF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IRG4PH40UPBF?> डेटा पत्रक पीडीएफ

IRG4PH40UPBF pdf
IRG4PH40UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
V(BR)CES/TJ
VCE(ON)
VGE(th)
VGE(th)/TJ
gfe
ICES
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage T
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance U
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Min.
1200
18
3.0
16
Typ. Max. Units
Conditions
——
——
0.43 —
2.43 3.1
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 21A
VGE = 15V
2.97 — V IC = 41A
See Fig.2, 5
2.47 —
IC = 21A , TJ = 150°C
— 6.0
VCE = VGE, IC = 250µA
-11 — mV/°C VCE = VGE, IC = 250µA
24 —
S VCE = 100V, IC = 21A
— 250
VGE = 0V, VCE = 1200V
— 2.0 µA VGE = 0V, VCE = 10V, TJ = 25°C
— 5000
VGE = 0V, VCE = 1200V, TJ = 150°C
— ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
Typ. Max.
86 130
13 20
29 44
24 —
24 —
220 330
180 270
1.04 —
3.40 —
4.44 5.2
24 —
25 —
310 —
380 —
7.39 —
13 —
1800 —
120 —
18 —
Units
nC
ns
mJ
ns
mJ
nH
pF
Conditions
IC = 21A
VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
IC = 21A, VCC = 960V
VGE = 15V, RG = 10
Energy losses include "tail"
See Fig. 9, 10, 14
TJ = 150°C,
IC = 21A, VCC = 960V
VGE = 15V, RG = 10
Energy losses include "tail"
See Fig. 11, 14
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
2 www.irf.com

विन्यास 9 पेज
डाउनलोड[ IRG4PH40UPBF Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRG4PH40UPBFINSULATED GATE BIPOLAR TRANSISTORInternational Rectifier
International Rectifier


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English