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IRG4PC60UPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4PC60UPBF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRG4PC60UPBF pdf
IRG4PC60UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 ---- ----
V(BR)ECS
Emitter-to-Collector Breakdown Voltage „ 17 ---- ----
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ---- 0.28 ----
---- 1.7 2.0
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 40A
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
---- 1.9 ----
---- 1.6 ----
V
IC = 75A
See Fig.2, 5
IC = 40A , TJ = 150°C
3.0 ---- 6.0
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage ---- -12 ---- mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance …
44 59 ---- S VCE 100V, IC = 40A
ICES
Zero Gate Voltage Collector Current
---- ---- 250 µA VGE = 0V, VCE = 600V
---- ---- 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
IGES Gate-to-Emitter Leakage Current
---- ---- 5000
VGE = 0V, VCE = 600V, TJ = 150°C
---- ---- ±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
---- 310 320
---- 41 46
---- 110 120
---- 39 ----
---- 42 ----
---- 200
---- 100
---- 0.28 ----
---- 1.1 ----
---- 1.3 1.8
---- 36 ----
---- 42 ----
---- 300 ----
---- 160 ----
---- 2.6 ----
---- 13 ----
---- 5860 ----
---- 370 ----
---- 75 ----
Units
nC
ns
mJ
ns
mJ
nH
pF
Conditions
IC = 40A
VCC = 480V
VGE = 15V
See Fig. 8
TJ = 25°C
IC = 40A, VCC = 480V
VGE = 15V, RG = 5.0
Energy losses include "tail"
See Fig. 10, 11, 13, 14
TJ = 150°C,
IC = 40A, VCC = 480V
VGE = 15V, RG = 5.0
Energy losses include "tail"
See Fig. 13, 14
Measured 5mm from package
VGE = 0V
VCC = 30V
ƒ = 1.0MHz
See Fig. 7
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = TBD µH,
RG = 5.0W. (See fig. 13a)
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
„ Pulse width 80µs; duty factor 0.1%.
… Pulse width 5.0µs, single shot.
2 www.irf.com

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IRG4PC60UPBFINSULATED GATE BIPOLAR TRANSISTORInternational Rectifier
International Rectifier


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