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IRG4PC60FPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4PC60FPBF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRG4PC60FPBF pdf
IRG4PC60FPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — —
V VGE = 0V, IC = 250µA
V(BR)ECS
Emitter-to-Collector Breakdown Voltage „ 16 — —
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.13 —
— 1.5 1.8
V
V/°C
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 60A
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
— 1.7 — V IC = 90A
See Fig.2, 5
— 1.5 —
IC = 60A , TJ = 150°C
3.0 — 6.0
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance …
36 69 — S VCE = 100V, IC = 60A
ICES
Zero Gate Voltage Collector Current
— — 250 µA VGE = 0V, VCE = 600V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 290 340
IC = 40A
— 40 47 nC VCC = 400V
— 100 130
VGE = 15V
See Fig. 8
— 42 —
— 66 — ns TJ = 25°C
— 310 360
IC = 60A, VCC = 480V
— 170 220
VGE = 15V, RG = 5.0
— 0.30 —
Energy losses include "tail"
— 4.6 — mJ See Fig. 10, 11, 13, 14
— 4.9 6.3
— 39 —
TJ = 150°C,
— 66 —
— 470 —
ns IC = 60A, VCC = 480V
VGE = 15V, RG = 5.0
— 300 —
Energy losses include "tail"
— 8.8 — mJ See Fig. 13, 14
— 13 — nH Measured 5mm from package
— 6050 —
VGE = 0V
— 360 —
— 66 —
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = TBD µH,
RG = 5.0. (See fig. 13a)
„ Pulse width 80µs; duty factor 0.1%.
… Pulse width 5.0µs, single shot.
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
2 www.irf.com

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