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IRG4PC30SPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4PC30SPBF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRG4PC30SPBF?> डेटा पत्रक पीडीएफ

IRG4PC30SPBF pdf
IRG4PC30SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
V(BR)CES/TJ
VCE(ON)
VGE(th)
VGE(th)/TJ
gfe
ICES
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage „
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance …
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Min.
600
18
—
—
—
—
3.0
—
6.0
—
—
—
—
Typ.
—
—
0.75
1.40
1.84
1.45
—
-11
11
—
—
—
—
Max. Units
Conditions
— V VGE = 0V, IC = 250µA
— V VGE = 0V, IC = 1.0A
— V/°C VGE = 0V, IC = 1.0mA
1.6 IC = 18A
VGE = 15V
— V IC = 34A
See Fig.2, 5
— IC = 18A , TJ = 150°C
6.0 VCE = VGE, IC = 250µA
— mV/°C VCE = VGE, IC = 250µA
— S VCE = 100V, IC = 18A
250 µA VGE = 0V, VCE = 600V
2.0 VGE = 0V, VCE = 10V, TJ = 25°C
1000
VGE = 0V, VCE = 600V, TJ = 150°C
±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max.
50 75
7.3 11
17 26
22 —
18 —
540 810
390 590
0.26 —
3.45 —
3.71 5.6
21 —
19 —
790 —
760 —
6.55 —
13 —
1100 —
72 —
13 —
Units
nC
ns
mJ
ns
mJ
nH
pF
Conditions
IC = 18A
VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
IC = 18A, VCC = 480V
VGE = 15V, RG = 23
Energy losses include "tail"
See Fig. 9, 10, 14
TJ = 150°C,
IC = 18A, VCC = 480V
VGE = 15V, RG = 23
Energy losses include "tail"
See Fig. 11, 14
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23,
(See fig. 13a)
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
„ Pulse width 80µs; duty factor 0.1%.
… Pulse width 5.0µs, single shot.
2 www.irf.com

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