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8N65K-MT डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL POWER MOSFET - Unisonic Technologies

भाग संख्या 8N65K-MT
समारोह N-CHANNEL POWER MOSFET
मैन्युफैक्चरर्स Unisonic Technologies 
लोगो Unisonic Technologies लोगो 
पूर्व दर्शन
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<?=8N65K-MT?> डेटा पत्रक पीडीएफ

8N65K-MT pdf
8N65K-MT
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 650 V
VGSS ±30 V
Drain Current
Continuous
Pulsed (Note 2)
ID
IDM
8A
32 A
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
350 mJ
4.5 V/ns
Power Dissipation
Junction Temperature
PD 48 W
TJ
+150
°C
Operating Temperature
Storage Temperature
TOPR
TSTG
-55 ~ +150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=10.93mH, IAS=8A, VDD= 50V, RG=25, Starting TJ=25°C
4. ISD 8A, di/dt 200A/μs, VDD BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATING
62.5
2.6
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
8N65K-MTN-CHANNEL POWER MOSFETUnisonic Technologies
Unisonic Technologies


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