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8N60-E डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL POWER MOSFET - Unisonic Technologies

भाग संख्या 8N60-E
समारोह N-CHANNEL POWER MOSFET
मैन्युफैक्चरर्स Unisonic Technologies 
लोगो Unisonic Technologies लोगो 
पूर्व दर्शन
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<?=8N60-E?> डेटा पत्रक पीडीएफ

8N60-E pdf
8N60-E
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 600 V
VGSS ±30 V
Avalanche Current (Note 2)
Drain Current
Continuous
Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IAR
ID
IDM
EAS
EAR
dv/dt
8A
8A
32 A
160 mJ
14.7 mJ
4.5 V/ns
Power Dissipation
Junction Temperature
PD 48 W
TJ
+150
°C
Operating Temperature
Storage Temperature
TOPR
TSTG
-55 ~ +150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L = 5mH, IAS = 8A, VDD = 50V, RG = 25 , Starting TJ = 25°C
4. ISD 7.5A, di/dt 200A/μs, VDDBVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATING
62.5
2.6
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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