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P8NK100Z डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - STP8NK100Z - STMicroelectronics

भाग संख्या P8NK100Z
समारोह STP8NK100Z
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
1 Page
		
<?=P8NK100Z?> डेटा पत्रक पीडीएफ

P8NK100Z pdf
1 Electrical ratings
1 Electrical ratings
STF8NK100Z - STP8NK100Z
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS=0)
VDGR Drain-gate Voltage
VGS Gate-Source Voltage
ID Note 1 Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM Note 2 Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD (HBM-C=100pF, R=1.5KΩ)
dv/dt Note 3 Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj Operating Junction Temperature
Tstg Storage Temperature
Table 2. Thermal data
Rthj-case
Rthj-a
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering
Purpose
Table 3. Avalanche Characteristics
Symbol
Parameter
IAR
Avalanche Current, Repetitive or
Not-Repetitive (pulse width limited by Tj max)
Single Pulse Avalanche Energy
EAS (starting Tj= 25°C, ID=IAR, VDD=50V)
TO-220
6.5
4.3
16
160
1.28
--
Value
TO-220FP
1000
1000
± 30
4000
4.5
6.5
4.3
16
40
0.32
2500
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
TO-220
0.78
62.5
300
TO-220FP
3.1
°C/W
°C/W
°C
Value
6.5
320
Unit
A
mJ
2/13

विन्यास 13 पेज
डाउनलोड[ P8NK100Z Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
P8NK100ZSTP8NK100ZSTMicroelectronics
STMicroelectronics


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