DataSheet.in

IRF5851PbF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF5851PbF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IRF5851PbF?> डेटा पत्रक पीडीएफ

IRF5851PbF pdf
IRF5851PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
N-Ch 20 — —
P-Ch -20 — —
V
N-Ch — 0.016 —
P-Ch — -0.011 — V/°C
N-Ch
P-Ch
— 0.090
— 0.120
— 0.135
— 0.220
N-Ch 0.60 — 1.25
P-Ch -0.45 — -1.2 V
N-Ch 5.2 — —
P-Ch 3.5 — — S
N-Ch — — 1.0
P-Ch — — -1.0
N-Ch — — 25 µA
P-Ch — — -25
N-P –– — ±100
N-Ch — 4.0 6.0
P-Ch — 3.6 5.4
N-Ch — 0.95 —
P-Ch — 0.66 — nC
N-Ch — 0.83 —
P-Ch — 5.7 —
N-Ch — 6.6 —
P-Ch — 8.3 —
N-Ch — 1.2 —
P-Ch — 14 —
N-Ch — 15 — ns
P-Ch — 31 —
N-Ch — 2.4 —
P-Ch — 28 —
N-Ch — 400 —
P-Ch — 320 —
N-Ch — 48 —
P-Ch — 56 — pF
N-Ch — 32 —
P-Ch — 40 —
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 4.5V, ID = 2.7A ‚
VGS = 2.5V, ID = 2.2A ‚
VGS = -4.5V, ID = -2.2A ‚
VGS = -2.5V, ID = -1.7A ‚
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 10V, ID = 2.7A ‚
VDS = -10V, ID = -2.2A ‚
VDS = 16 V, VGS = 0V
VDS = -16V, VGS = 0V
VDS = 16 V, VGS = 0V, TJ = 70°C
VDS = -16V, VGS = 0V, TJ = 70°C
VGS = ± 12V
N-Channel
ID = 2.7A, VDS = 10V, VGS = 4.5V
‚
P-Channel
ID = -2.2A, VDS = -10V, VGS = -4.5V
N-Channel
VDD = 10V, ID = 1.0A, RG = 6.2,
VGS = 4.5V
P-Channel
VDD = -10V, ID = -1.0A, RG = 6.0,
VGS = -4.5V
‚
N-Channel
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
P-Channel
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current (Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 & 26 )
‚ Pulse width 400µs; duty cycle 2%.
Min. Typ. Max. Units
N-Ch — — 0.96
P-Ch —
N-Ch —
— -0.96
— 11
A
P-Ch — — -9.0
N-Ch —
P-Ch —
— 1.2
— -1.2
V
N-Ch —
P-Ch —
25
23
38
35
ns
N-Ch —
P-Ch —
6.5 9.8
7.7 12
nC
Conditions
TJ = 25°C, IS = 0.96A, VGS = 0V ‚
TJ = 25°C, IS = -0.96A, VGS = 0V ‚
N-Channel
TJ = 25°C, IF = 0.96A, di/dt = 100A/µs
P-Channel
‚
TJ = 25°C, IF = -0.96A, di/dt = -100A/µs
ƒ Surface mounted on FR-4 board, t 10sec.
2 www.irf.com

विन्यास 14 पेज
डाउनलोड[ IRF5851PbF Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRF5851PbFPower MOSFETInternational Rectifier
International Rectifier


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English