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IRF610L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - Vishay

भाग संख्या IRF610L
समारोह Power MOSFET
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=IRF610L?> डेटा पत्रक पीडीएफ

IRF610L pdf
www.vishay.com
IRF610S, SiHF610S, IRF610L, SiHF610L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
(PCB mount) c
RthJA
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
MIN.
-
-
-
TYP.
-
-
-
MAX.
40
62
3.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Static
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 200 V, VGS = 0 V
VDS = 160V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.0 A b
VDS = 50 V, ID = 2.0 A b
Dynamic
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 3.3 A, VDS = 160 V
see fig. 6 and 13 b
VDD = 100 V, ID = 3.3 A,
Rg = 24 , RD = 30 
see fig. 10 b
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
package and center of
G
LS die contact
Drain-Source Body Diode Characteristics
D
S
MIN.
200
-
2.0
-
-
-
-
0.80
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
- -V
0.30 - V/°C
- 4.0 V
- ± 100 nA
- 25
μA
- 250
- 1.5
- -S
140 -
53 - pF
15 -
- 8.2
- 1.8 nC
- 4.5
8.2 -
17 -
ns
14 -
8.9 -
4.5 -
nH
7.5 -
Continuous Source-Drain Diode Current IS MOSFET symbol
D - - 3.3
showing the
integral reverse
G
A
Pulsed Diode Forward Current a
ISM p - n junction diode
S - - 10
Body Diode Voltage
VSD TJ = 25 °C, IS = 3.3 A, VGS = 0 V b - - 2.0 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
TJ = 25 °C, IF = 3.3 A,
dI/dt = 100 A/μs b
- 150 310 ns
- 0.60 1.4 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 or G-10 material).
S15-1659-Rev. D, 20-Jul-15
2
Document Number: 91024
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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