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IPD068N10N3G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power-Transistor - Infineon Technologies

भाग संख्या IPD068N10N3G
समारोह Power-Transistor
मैन्युफैक्चरर्स Infineon Technologies 
लोगो Infineon Technologies लोगो 
पूर्व दर्शन
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<?=IPD068N10N3G?> डेटा पत्रक पीडीएफ

IPD068N10N3G pdf
IPD068N10N3 G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R thJC
R thJA
minimal footprint
6 cm2 cooling area3)
min.
Values
typ.
Unit
max.
- - 1 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
100
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=90 µA 2 2.7 3.5
Zero gate voltage drain current
I DSS
V DS=100 V, V GS=0 V,
T j=25 °C
-
0.1
1 µA
Gate-source leakage current
Drain-source on-state resistance
V DS=100 V, V GS=0 V,
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=10 V, I D=90 A
-
-
-
10 100
1 100 nA
5.7 6.8 mW
Gate resistance
Transconductance
V GS=6 V, I D=45 A
- 7.1 12.3
R G - 1.6
g fs
|V DS|>2|I D|R DS(on)max,
I D=90 A
54
107
-W
-S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2
page 2
2014-05-19

विन्यास 9 पेज
डाउनलोड[ IPD068N10N3G Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IPD068N10N3GPower-TransistorInfineon Technologies
Infineon Technologies


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