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IPB80N06S2L-11 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power-Transistor - Infineon Technologies

भाग संख्या IPB80N06S2L-11
समारोह Power-Transistor
मैन्युफैक्चरर्स Infineon Technologies 
लोगो Infineon Technologies लोगो 
पूर्व दर्शन
1 Page
		
<?=IPB80N06S2L-11?> डेटा पत्रक पीडीएफ

IPB80N06S2L-11 pdf
IPB80N06S2L-11
IPP80N06S2L-11, IPI80N06S2L-11
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
- - 0.95 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area5)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
55
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=93 µA 1.2 1.6 2.0
Zero gate voltage drain current
I DSS
V DS=55 V, V GS=0 V,
T j=25 °C
-
0.01
1 µA
V DS=55 V, V GS=0 V,
T j=125 °C2)
-
1 100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1 100 nA
Drain-source on-state resistance
R DS(on) V GS=4.5 V, I D=40 A
- 10.7 14.7 mW
V GS=4.5 V, I D=40 A, - 10.4 14.4
SMD version
Drain-source on-state resistance
RDS(on) V GS=10 V, I D=40 A,
-
8.7 11.0 mΩ
V GS=10 V, I D=40 A, - 8.4 10.7
SMD version
Rev. 1.1
page 2
2010-10-26

विन्यास 8 पेज
डाउनलोड[ IPB80N06S2L-11 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IPB80N06S2L-11Power-TransistorInfineon Technologies
Infineon Technologies


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