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IXGT24N170AH1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Voltage IGBT - IXYS

भाग संख्या IXGT24N170AH1
समारोह High Voltage IGBT
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGT24N170AH1?> डेटा पत्रक पीडीएफ

IXGT24N170AH1 pdf
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs IC = 24A, VCE = 10V, Note 2
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge IC = 16A, VGE = 15V, VCE = 0.5 VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 25°C
IC = 24A, VGE = 15V
VCE = 0.5 VCES, RG = 10Ω
Note 1
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 125°C
IC = 24A, VGE = 15V
VCE = 0.5 VCES, RG = 10Ω
Note 1
RthJC
RthCK
(TO-247)
Characteristic Values
Min.
Typ.
Max.
13 22
S
2860
198
58
pF
pF
pF
140 nC
18 nC
60 nC
21 ns
36 ns
2.97 mJ
336 ns
40 80 ns
0.79 1.50 mJ
23 ns
31 ns
3.60 mJ
360 ns
96 ns
1.47 mJ
0.50 °C/W
0.21 °C/W
Reverse Diode (FRED)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VF IF = 20A, VGE = 0V
IRM
trr
tIRrrM
RthJC
IF = 20A, -diF/dt = 150A/μs,
VR = 1200V, VGE = 0V
TJ = 125°C
TJ = 125°C
Characteristic Values
Min. Typ. Max.
2.5 2.95 V
2.5 V
15 A
80 ns
20 A
200 ns
0.9 °C/W
IXGH24N170AH1
IXGT24N170AH1
TO-247 (IXGH) Outline
123
P
e
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A 4.7 5.3
AA12
2.2 2.54
2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
2 - Drain
Tab - Drain
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 (IXGT) Outline
Notes:
1.
Switching times may increase
higher TJ or increased RG.
for
VCE
(Clamp)
>
0.5
VCES,
2. Pulse Test, t 300μs; Duty Cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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डाउनलोड[ IXGT24N170AH1 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGT24N170AH1High Voltage IGBTIXYS
IXYS


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