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IXGX32N170H1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Voltage IGBT - IXYS

भाग संख्या IXGX32N170H1
समारोह High Voltage IGBT
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGX32N170H1?> डेटा पत्रक पीडीएफ

IXGX32N170H1 pdf
IXGX 32N170H1
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC25; VCE = 10 V
Note 2
VCE = 25 V, VGE = 0 V, f = 1 MHz
25 33
3500
250
40
S
pF
pF
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
RG = 2.7 Ω, VCE = 0.8 VCES
Note 3
155 nC
30 nC
51 nC
45 ns
38 ns
270 500 ns
250 500 ns
15 25 mJ
PLUS247 Outline (IXGX)
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
RG = 2.7 Ω, VCE = 0.8 VCES
Note 3
48 ns
42 ns
6.0 mJ
360 ns
560 ns
22 mJ
0.35 K/W
0.15
K/W
Reverse Diode (FRED) (Note 4)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF IF = 70A, VGE = 0 V, Pulse test,
t 300 µs, duty cycle d 2 %
IRM IF = 50A, VGE = 0 V, -diF/dt = 800 A/µs
trr VR = 600 V
2.7 V
50 A
150 ns
RthJC
0.4 K/W
Notes: 1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t 300 µs, duty cycle 2 %
3. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG.
4. See DH60-18A and IXGH32N170A datasheets for additional
characteristics
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

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डाउनलोड[ IXGX32N170H1 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGX32N170H1High Voltage IGBTIXYS
IXYS


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