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IXGX60N60C2D1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT - IXYS

भाग संख्या IXGX60N60C2D1
समारोह IGBT
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGX60N60C2D1?> डेटा पत्रक पीडीएफ

IXGX60N60C2D1 pdf
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
Eon
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ
=
25°C
unless otherwise
Min. Typ.
specified)
Max.
IC = 50 A; VCE = 10 V, Note 1
40 58
S
VCE = 25 V, VGE = 0 V, f = 1 MHz
3900
280
97
pF
pF
pF
IC = 50 A, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = 50 A, VGE = 15 V
VCE = 400 V, RG = Roff = 2.0 Ω
Inductive load, TJ = 125°C
IC = 50 A, VGE = 15 V
VCE = 400 V, RG = Roff = 2.0 Ω
146 nC
28 nC
50 nC
18 ns
0.4 mJ
25 ns
95 150 ns
35 ns
0.48 0.8 mJ
18 ns
25 ns
0.9 mJ
130 ns
80 ns
1.2 mJ
0.26 K/W
0.15 K/W
IXGK 60N60C2D1
IXGX 60N60C2D1
TO-264 AA Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
5.13
2.89
2.10
1.42
2.69
3.09
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00
20.32
2.29
3.17
0.25
20.83
2.59
3.66
6.07
8.38
3.81
1.78
6.04
6.27
8.69
4.32
2.29
6.30
1.57 1.83
PLUS247 Outline
Inches
Min. Max.
.190
.100
.079
.044
.094
.114
.021
.202
.114
.083
.056
.106
.122
.033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000
.800
.090
.125
.010
.820
.102
.144
.239
.330
.150
.070
.238
.247
.342
.170
.090
.248
.062 .072
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
min.
otherwise specified)
typ. max.
VF IF = 60 A, VGE = 0 V,
Note 1
TJ = 150°C
2.1 V
1.4
IRM IF = 60 A, VGE = 0 V, -diF/dt = 100 A/μ TJ = 100°C 8.3 A
trr
VR = 100 V
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
35 ns
RthJC
Note 1: Pulse test, t 300 μs, duty cycle 2 %
0.65 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585
6,710,405B2 6,759,692
6,710,463
6771478 B2

विन्यास 7 पेज
डाउनलोड[ IXGX60N60C2D1 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGX60N60C2D1IGBTIXYS
IXYS


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