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IXGR50N90B2D1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT - IXYS

भाग संख्या IXGR50N90B2D1
समारोह IGBT
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGR50N90B2D1?> डेटा पत्रक पीडीएफ

IXGR50N90B2D1 pdf
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs
IC
=
I
T
;
VCE
=
10
V,
Note
1,
2
Cies
Coes
Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
Q
ge
IC =
I
T
,
VGE
=
15
V,
VCE
=
0.5
VCES
Q
gc
t
d(on)
t
ri
t
d(off)
tfi
Eoff
Inductive load
IC =
VCE
=IT,7V20GEV=,
15 V
RG =
Roff
=
5
Ω
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 125°C
IC =
I,
T
VGE
=
15
V
VCE = 720 V, RG = Roff = 5 Ω,
Note 2
RthJC
RthCH
Diode
Symbol
Conditions
(TJ = 25°C unless otherwise specified )
VF
IF = 30 A; Note 1
TVJ = 150°C
IRM
trr
IVFR==IT1, 0d0iF/Vd;t
= -100
VGE = 0
A/μs;
V
TVJ
=
100°C
RthJC
RthCH
with heat transfer paste
Note 1: Pulse test, t 300 μs, duty cycle 2 %
Note 2: Test Current IT = 50A
Characteristic Values
Min. Typ. Max.
25 40
S
2500
180
75
pF
pF
pF
135 nC
23 nC
50 nC
20 ns
28 ns
350 500 ns
200 ns
4.7 7.5 mJ
20 ns
28 ns
1.5 mJ
400 ns
420 ns
8.7 mJ
1.25 K/W
0.21 K/W
IXGR 50N90B2D1
ISOPLUS247 Outline
Characteristic Values
Min. Typ. Max.
2.5 2.75 V
1.8 V
5.5 11.5 A
200 ns
1.1 K/W
0.25 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by4,835,592 4,931,844 5,049,961 5,237,481 6,162,665
6,404,065 B1 6,683,344 6,727,585
one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343
6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505
6,710,463 6771478 B2

विन्यास 6 पेज
डाउनलोड[ IXGR50N90B2D1 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGR50N90B2D1IGBTIXYS
IXYS


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