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IXSH35N120A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Voltage High speed IGBT - IXYS

भाग संख्या IXSH35N120A
समारोह High Voltage High speed IGBT
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXSH35N120A?> डेटा पत्रक पीडीएफ

IXSH35N120A pdf
IXSH 35N120A
Symbol
gfs
IC(on)
Cies
C
oes
Cres
Qg
Qge
Q
gc
td(on)
tri
td(off)
t
fi
Eoff
td(on)
t
ri
Eon
t
d(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
VGE = 15 V, VCE = 10 V
V = 25 V, V = 0 V, f = 1 MHz
CE GE
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 mH
V
CE
=
0.8
V,
CES
R
G
=
2.7
W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 mH
V
CE
=
0.8
V,
CES
R
G
=
2.7
W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher T or increased R
JG
20 26
S
170 A
3750
235
60
pF
pF
pF
150 190 nC
40 60 nC
70 100 nC
80 ns
150 ns
400 900 ns
500 700 ns
10 mJ
80 ns
150 ns
2.5 mJ
400 ns
700 ns
15 mJ
0.42 K/W
0.25 K/W
TO-247 AD (IXSH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXSH35N120AHigh Voltage High speed IGBTIXYS
IXYS
IXSH35N120BIGBTIXYS Corporation
IXYS Corporation


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