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IXGX35N120B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT - IXYS

भाग संख्या IXGX35N120B
समारोह IGBT
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGX35N120B?> डेटा पत्रक पीडीएफ

IXGX35N120B pdf
Symbol
gfs
C
ies
Coes
C
res
Q
g
Qge
Qgc
td(on)
t
ri
td(off)
tfi
Eoff
t
d(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
R
thCK
IXGK 35N120B IXGK 35N120BD1
IXGX 35N120B IXGX 35N120BD1
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
30 40
4620
260
90
S
pF
pF
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
V
CE
=
0.8
V,
CES
R
G
=
R
off
=
5
Remarks: Switching times may
increase for V (Clamp) > 0.8 • V ,
CE CES
higher TJ or increased RG
Inductive
load,
T
J
=
125°C
IC = IC90, VGE = 15 V
V
CE
=
0.8
V,
CES
R
G
=
R
off
=
5
Remarks: Switching times may
increase for V (Clamp) > 0.8 • V ,
CE CES
higher TJ or increased RG
170 nC
28 nC
57 nC
50 ns
27 ns
180 280 ns
160 320 ns
3.8 7.3 mJ
55 ns
31 ns
2.6 mJ
300 ns
360 ns
8.0 mJ
0.35 K/W
0.15
K/W
TO-264 AA Outline (IXGK)
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00
20.32
2.29
3.17
0.25
20.83
2.59
3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
Inches
Min. Max.
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
.330 .342
.150 .170
.070 .090
.238 .248
.062 .072
PLUS247TM Outline (IXGX)
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IRM
t
rr
RthJC
IF = IC90, VGE = 0 V, Pulse test,
t 300 µs, duty cycle d 2 %, TJ = 125°C
2.35 V
IF = IC90, VGE = 0 V, -diF/dt = 480 A/µs
V = 540 V
R
T
J
=100°C
IF = 1 A; -di/dt = 200 A/µs; VR = 30 V TJ = 25°C
32
225
40
36 A
ns
60 ns
0.65 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025

विन्यास 2 पेज
डाउनलोड[ IXGX35N120B Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGX35N120BIGBTIXYS
IXYS
IXGX35N120BD1IGBTIXYS
IXYS


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