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IXGT10N170 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Voltage IGBT - IXYS

भाग संख्या IXGT10N170
समारोह High Voltage IGBT
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGT10N170?> डेटा पत्रक पीडीएफ

IXGT10N170 pdf
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs
IC(ON)
IC = 10A, VCE = 10V, Note 1
VCE = 10V, VGE = 10V
Cies
Coes
Cres
Qg
Qge
Qgc
VCE = 25V, VGE = 0V, f = 1MHz
IC = 10A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tr
td(off)
tf
Resistive load, TJ = 25°C
IC = 10A, VGE = 15V
VCE = 850V, RG = 16Ω
td(on)
tri
td(off)
tfi
Resistive load, TJ = 125°C
IC = 10A, VGE = 15V
VCE = 850V, RG = 16Ω
RthJC
RthCS
(TO-247)
Characteristic Values
Min. Typ. Max.
3.8 6.3
33
S
A
700 pF
40 pF
14 pF
32 nC
4 nC
16 nC
30 ns
69 ns
132 ns
600 ns
30 ns
270 ns
135 ns
495 ns
1.1 °C/W
0.25 °C/W
Note 1: Pulse test, t 300μs, duty cycle, d 2%.
IXGH10N170
IXGT10N170
TO-247 AD Outline
123
Terminals: 1 - Gate
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
2 - Drain
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
TO-268 Outline
Min Recommended Footprint
Terminals: 1 - Gate
2 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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डाउनलोड[ IXGT10N170 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGT10N170High Voltage IGBTIXYS
IXYS
IXGT10N170AHigh Voltage IGBTIXYS
IXYS


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