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IXGP20N120BD1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Voltage IGBT - IXYS

भाग संख्या IXGP20N120BD1
समारोह High Voltage IGBT
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGP20N120BD1?> डेटा पत्रक पीडीएफ

IXGP20N120BD1 pdf
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
IC = 20A; VCE = 10 V,
Note 2.
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 20A, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = 20 A; VGE = 15 V
VCE = 0.8 VCES; RG = Roff = 10
Note 1.
Inductive load, TJ = 125°C
IC = 20A; VGE = 15 V
VCE = 0.8 VCES; RG = Roff = 10
Note 1
12 18
1700
20N120B
95
20N120BD1 105
39
72
12
27
25
15
150
160
2.1
25
18
1.4
270
360
3.5
S
pF
pF
pF
pF
nC
nC
nC
ns
ns
280 ns
320 ns
3.5 mJ
ns
ns
mJ
ns
ns
mJ
0.65 K/W
0.25
K/W
IXGP 20N120B
IXGP 20N120BD1
TO-220 Outline
Pins: 1 - Gate
3 - Emitter
2 - Collector
4 - Collector
Reverse Diode (FRED)
Symbol Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IF
IRM
trr
trr
RthJC
IF = 10 A, VGE = 0 V
TC = 90°C
IF = 10 A; -diF/dt = 400 A/µs, VR = 600 V
VGE = 0 V; TJ = 125°C
IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V
3.3 V
10 A
14 A
120 ns
40 ns
2.5 K/W
Notes: 1.
2.
Switching times may increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG.
Pulse test, t 300 µs, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

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डाउनलोड[ IXGP20N120BD1 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGP20N120BD1High Voltage IGBTIXYS
IXYS


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