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LBSS8402DW1T1G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - LRC

भाग संख्या LBSS8402DW1T1G
समारोह Power MOSFET
मैन्युफैक्चरर्स LRC 
लोगो LRC लोगो 
पूर्व दर्शन
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<?=LBSS8402DW1T1G?> डेटा पत्रक पीडीएफ

LBSS8402DW1T1G pdf
LESHAN RADIO COMPANY, LTD.
LBSS8402DW1T1G , S-LBSS8402DW1T1G
N-Channel
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
Gate–Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1.)
Gate–Source Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain–to–Source On–Resistance
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = –40°C to +85°C)
(VGS = 5.0 Vdc, ID = 200 mAdc)
V(BR)DSS
IDSS
IGSS
VGS(th)
rDS(on)
50
0.5
– – Vdc
µAdc
– 0.1
– 0.5
±0.1 µAdc
– 1.5 Vdc
Ohms
5.6 10
– 3.5
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Ciss
– 42 –
pF
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Coss
15 –
(VDG = 25 Vdc, VGS = 0, f = 1 MHz)
Crss
3–
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Turn–Off Delay Time
(VDD = 30 Vdc, ID = 0.2 Adc,)
td(on) – 5 – ns
td(off) – 7 –
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
Rev .A 2/6

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