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IXGQ85N33PCD1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Speed IGBT - IXYS

भाग संख्या IXGQ85N33PCD1
समारोह High Speed IGBT
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGQ85N33PCD1?> डेटा पत्रक पीडीएफ

IXGQ85N33PCD1 pdf
IXGQ85N33PCD1
SymbolTest Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
gfs IC = 43 A, VCE = 10 V
30 49
S
Cies
Coes
Cres
Qg
Qge
Q
gc
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 43 A, VGE = 15 V, VCE = 0.5 VCES
2200
155
25
80
15
23
pF
pF
pF
nC
nC
nC
td(on)
t
ri
td(off)
tfi
Resistive load, TJ = 25°C
IC = 50 A, VGE = 15 V
VCE = 240 V, RG = 5 Ω
20 ns
43 ns
87 ns
72 350 ns
t
d(on)
tri
td(off)
tfi
RthJC
RthCK
Resistive load, TJ = 125°C
IC = 50 A, VGE = 15 V
VCE = 240 V, RG = 5 Ω
20 ns
95 ns
88 ns
130 ns
0.833 K/W
0.25 K/W
TO-3P (IXTQ) Outline
Reverse Diode
SymbolTest Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
VF
RthJC
trr
IF = 20A,VGE = 0 V, Note 1
IF = 40A,VGE = 0 V, Note 1
2.0 V
2.8 V
2.5 K/W
250 ns
Note 1: Pulse test, t 300 μs, duty cycle 2 %
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

विन्यास 5 पेज
डाउनलोड[ IXGQ85N33PCD1 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGQ85N33PCD1High Speed IGBTIXYS
IXYS


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