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DNA30E2200FE डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Voltage Standard Rectifier - IXYS

भाग संख्या DNA30E2200FE
समारोह High Voltage Standard Rectifier
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
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<?=DNA30E2200FE?> डेटा पत्रक पीडीएफ

DNA30E2200FE pdf
Rectifier
Symbol
VRSM
VRRM
IR
VF
I FAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
VR = 2200 V
VR = 2200 V
forward voltage drop
IF = 30 A
IF = 60 A
IF = 30 A
IF = 60 A
average forward current
TC = 110°C
rectangular
d = 0.5
VF0
rF
R thJC
R thCH
Ptot
I FSM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ junction capacitance
VR = 700 V; f = 1 MHz
DNA30E2200FE
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 150 °C
TVJ = 175°C
Ratings
min. typ. max.
2300
2200
40
1.5
1.25
1.50
1.22
1.59
30
Unit
V
V
µA
mA
V
V
V
V
A
TVJ = 175°C
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
0.20
7
0.83 V
12.8 m
1.35 K/W
K/W
110 W
370 A
400 A
315 A
340 A
685 A²s
665 A²s
495 A²s
480 A²s
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130123c

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डाउनलोड[ DNA30E2200FE Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
DNA30E2200FEHigh Voltage Standard RectifierIXYS
IXYS


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