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DMP10H400SK3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 100V P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP10H400SK3
समारोह 100V P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
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DMP10H400SK3 pdf
DMP10H400SK3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -10V
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Steady
State
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
IS
IDM
Value
-100
±20
-9
-5.5
-4
-15
Units
V
V
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TC = +25°C
TC = +100°C
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
42
17
44
3
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Min
-100
-1




Typ
190
210
-0.7
1239
42
28
13
8.4
17.5
2.8
3.2
9.1
14.9
57.4
34.4
25.2
24.5
Max
-1
±100
-3
240
300
-1.2




Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design; not subject to production testing.
Unit
V
µA
nA
V
m
V
pF
nC
ns
ns
nC
Test Condition
VGS = 0V, ID = -250µA
VDS = -80V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = -250µA
VGS = -10V, ID = -5A
VGS = -4.5V, ID =-5A
VGS = 0V, IS = -5A
VDS = -25V, VGS = 0V, f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = -60V, ID = -5A
VDD = -50V, RG = 9.1, ID = -5A
VGS = 0V, IS = -5A, dI/dt = 100A/μs
VGS = 0V, IS = -5A, dI/dt = 100A/μs
DMP10H400SK3
Document number: DS35932 Rev. 5 - 2
2 of 6
www.diodes.com
October 2014
© Diodes Incorporated

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