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DMP2008UFG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 20V P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP2008UFG
समारोह 20V P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
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<?=DMP2008UFG?> डेटा पत्रक पीडीएफ

DMP2008UFG pdf
DMP2008UFG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage (Note 5)
Characteristic
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 8)
Avalanche Energy (Note 8)
TA = +25°C
TA = +70°C
TC = +25°C
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
EAS
Value
-20
±8
-14
-11
-54
-80
-2.2
-15
-113
Units
V
V
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 6)
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
(Note 5)
(Note 6)
Symbol
PD
RΘJA
RΘJC
TJ, TSTG
Value
2.4
41
52
137
3.0
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -2.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
BODY DIODE CHARACTERISTICS
Diode Forward Voltage
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
VSD
trr
Qrr
Min
-20
-0.4
Typ
42
6909
635
563
2.5
72
40
8.6
14.5
22
33
291
124
-0.7
-0.7
25
15
Max
-1
±100
-1.0
8
9.8
13
17
Unit
Test Condition
V VGS = 0V, ID = -250µA
µA VDS = -16V, VGS = 0V
nA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -12A
mΩ VGS = -2.5V, ID = -10A
VGS = -1.8V, ID = -9.3A
VGS = -1.5V, ID = -8.3A
S VDS = -5V, ID = -12A
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nC VDD = -10V, ID = -12A
ns VGS = -4.5V, VDD = -10V,
RG = 6Ω, ID = -12A
V VGS = 0V, IS = -12A
V VGS = 0V, IS = -2A
ns IF = -12A, di/dt = 100A/µs
nC IF = -12A, di/dt = 100A/µs
Notes:
5. AEC-Q101 VGS maximum is ±6.4V.
6. RΘJA is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. RΘJC is guaranteed by design
while RΘJA is determined by the user’s board design.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
8 .UIS in production with L = 1mH, TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated
DMP2008UFG
Document number: DS35694 Rev. 14 - 2
2 of 6
www.diodes.com
August 2014
© Diodes Incorporated

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