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IXSA20N60B2D1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Speed IGBT - IXYS Corporation

भाग संख्या IXSA20N60B2D1
समारोह High Speed IGBT
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXSA20N60B2D1?> डेटा पत्रक पीडीएफ

IXSA20N60B2D1 pdf
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCS
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
min.
otherwise
typ.
specified)
max.
IC = 16A; VCE = 10 V, Note 1
3.5
VCE = 25 V, VGE = 0 V
f = 1 MHz
20N60B2D1
IC = 16A, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = 16A, VGE = 15 V
VSCwEit=ch0in.8gVtiCmESe,sRmGa=y1in0cΩrease for VCE
(Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive load, TJ = 125°C
IC = 16 A, VGE = 15 V
20N60B2
VCE = 0.8 VCES, RG = 10 Ω
20N60B2D1
Switching times may increase for
VCE (Clamp) > 0.8 • VCES, higher TJ
or increased RG
7.0
800
76
90
28
33
12
12
30
30
116
126
380
30
30
0.12
0.42
180
210
970
S
pF
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
600 μJ
ns
ns
mJ
mJ
ns
ns
μJ
0.66 K/W
0.3 K/W
IXSA 20N60B2D1
IXSP 20N60B2D1
TO-220 AB (IXSP) Outline
Dim. Millimeter
Min. Max.
A 12.70 13.97
B 14.73 16.00
C 9.91 10.66
D 3.54 4.08
E 5.85 6.85
F 2.54 3.18
G 1.15 1.65
H 2.79 5.84
J 0.64 1.01
K 2.54 BSC
M 4.32 4.82
N 1.14 1.39
Q 0.35 0.56
R 2.29 2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
TO-263 (IXSA) Outline
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF IF = 10A, VGE = 0 V
TJ =150°C
1.66 V
2.66 V
tIRrrM
IVFR==1120A0, VVGE = 0 V, -diF/dt = 100 A/μs
TTJJ
=
=
100°C
100°C
1.5
90
A
ns
trr IF = 1 A; -di/dt = 100 A/μs; VR = 30 V
RthJC
Note 1: Pulse test, t 300 μs, duty cycle d 2 %
30 ns
2.5 K/W
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
7.11 8.13
9.65 10.29
6.86 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .015
.018 .029
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2

विन्यास 6 पेज
डाउनलोड[ IXSA20N60B2D1 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXSA20N60B2D1High Speed IGBTIXYS Corporation
IXYS Corporation


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