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IRG4PH40UDPbF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4PH40UDPbF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRG4PH40UDPbF pdf
IRG4PH40UDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltageƒ 1200
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage —
VCE(on)
Collector-to-Emitter Saturation Voltage —
—
—
VGE(th)
Gate Threshold Voltage
3.0
ΔVGE(th)/ΔTJ Temperature Coeff. of Threshold Voltage —
gfe Forward Transconductance „ 16
ICES
Zero Gate Voltage Collector Current
—
—
VFM Diode Forward Voltage Drop
—
—
IGES Gate-to-Emitter Leakage Current —
—
0.43
2.43
2.97
2.47
—
-11
24
—
—
2.6
2.4
—
—V
— V/°C
3.1
—V
—
6.0
— mV/°C
—S
250 µA
5000
3.3 V
3.1
±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 21A
VGE = 15V
IC = 41A
See Fig. 2, 5
IC = 21A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 21A
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 150°C
IC = 8.0A
See Fig. 13
IC = 8.0A, TJ = 125°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
— 86 130
IC = 21A
— 13 20 nC VCC = 400V
See Fig. 8
— 29 44
— 46 —
VGE = 15V
TJ = 25°C
— 35 — ns IC = 21A, VCC = 800V
— 97 150
VGE = 15V, RG = 10Ω
— 240 360
Energy losses include "tail" and
— 1.80 —
diode reverse recovery.
— 1.93 — mJ See Fig. 9, 10, 18
— 3.73 4.6
— 42 —
— 32 —
TJ = 150°C, See Fig. 11, 18
ns IC = 21A, VCC = 800V
— 240 —
VGE = 15V, RG = 10Ω
— 510 —
Energy losses include "tail" and
— 7.04 — mJ diode reverse recovery.
— 13 — nH Measured 5mm from package
— 1800 —
— 120 —
VGE = 0V
pF VCC = 30V
See Fig. 7
— 18 —
ƒ = 1.0MHz
— 63 95 ns TJ = 25°C See Fig.
— 106 160
— 4.5 8.0
TJ = 125°C 14
A TJ = 25°C See Fig.
IF = 8.0A
— 6.2 11
TJ = 125°C 15
VR = 200V
— 140 380 nC TJ = 25°C See Fig.
— 335 880
TJ = 125°C
16 di/dt = 200A/µs
— 133 — A/µs TJ = 25°C See Fig.
— 85 —
TJ = 125°C 17
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