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IRFI4020H-117P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DIGITAL AUDIO MOSFET - International Rectifier

भाग संख्या IRFI4020H-117P
समारोह DIGITAL AUDIO MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRFI4020H-117P pdf
IRFI4020H-117P
gElectrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
200 ––– ––– V VGS = 0V, ID = 250µA
e––– 24 ––– mV/°C Reference to 25°C, ID = 1mA
––– 80 100 mVGS = 10V, ID = 5.5A
3.0 ––– 4.9
V VDS = VGS, ID = 100µA
––– -12 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 200V, VGS = 0V
––– ––– 250
VDS = 200V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
11 ––– ––– S VDS = 50V, ID = 5.5A
Qg Total Gate Charge
––– 19 29
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 4.9 –––
––– 0.95 –––
––– 5.8 –––
––– 7.4 –––
VDS = 100V
nC VGS = 10V
ID = 5.5A
See Fig. 6 and 15
Qsw Switch Charge (Qgs2 + Qgd)
––– 6.8 –––
RG(int)
td(on)
tr
td(off)
tf
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– 3.0 –––
––– 8.4 –––
Ãe
VDD = 100V, VGS = 10V
––– 8.0 –––
ID = 5.5A
––– 18 ––– ns RG = 2.4
––– 4.0 –––
Ciss Input Capacitance
––– 1240 –––
VGS = 0V
Coss Output Capacitance
––– 130 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 28 –––
ƒ = 1.0MHz,
See Fig.5
Coss eff.
LD
Effective Output Capacitance
Internal Drain Inductance
––– 110 –––
––– 4.5 –––
VGS = 0V, VDS = 0V to 160V
Between lead,
D
nH 6mm (0.25in.)
LS Internal Source Inductance
––– 7.5 –––
from package
G
and center of die contact
S
gDiode Characteristics
Parameter
IS @ TC = 25°C Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
76
230
Max. Units
Conditions
9.1 MOSFET symbol
A showing the
36 integral reverse
ep-n junction diode.
1.3 V TJ = 25°C, IS = 5.5A, VGS = 0V
e110 ns TJ = 25°C, IF = 5.5A, VDD = 160V
350 nC di/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 8.6mH, RG = 25, IAS = 5.5A.
ƒ Pulse width 400µs; duty cycle 2%.
„ Rθ is measured at TJ of approximately 90°C.
… Specifications refer to single MosFET.
2 www.irf.com

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