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IRFI510G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - Vishay

भाग संख्या IRFI510G
समारोह Power MOSFET
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFI510G?> डेटा पत्रक पीडीएफ

IRFI510G pdf
IRFI510G, SiHFI510G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
65
5.5
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
ΔVDS/TJ
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VDS = VGS, ID = 250 µA
VGS = ± 20
VDS = 100 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 2.7 Ab
VDS = 50 V, ID = 2.7 Ab
Input Capacitance
Ciss VGS = 0 V
Output Capacitance
Coss
VDS = 25 V
Reverse Transfer Capacitance
Crss f = 1.0 MHz, see fig. 5
Drain to Sink Capacitance C f = 1.0 MHz
MIN. TYP. MAX. UNIT
100 -
-V
- 0.63 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
µA
- - 250
-
-
0.54
Ω
1.2 -
-S
- 180 -
- 81 -
pF
- 15 -
- 12 -
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
LS
IS
ISM
VGS = 10 V
ID = 5.6 A, VDS = 80 V,
see fig. 6 and 13b
VDD = 50 V, ID = 5.6 A
RG = 24 Ω, RD = 8.4 Ω, see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
-
-
-
-
-
-
-
-
-
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
-
-
- 8.3
- 2.3 nC
- 3.8
6.9 -
16 -
ns
15 -
9.4 -
4.5 -
nH
7.5 -
- 4.5
A
- 18
Body Diode Voltage
VSD TJ = 25 °C, IS = 4.5 A, VGS = 0 Vb - - 2.5 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 5.6 A, di/dt = 100 A/µsb
-
100 200 ns
Qrr - 0.44 0.88 µC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
www.vishay.com
2
Document Number: 90178
S-Pending-Rev. A, 16-Jun-08

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