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IPD068P03L3G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power-Transistor - Infineon Technologies

भाग संख्या IPD068P03L3G
समारोह Power-Transistor
मैन्युफैक्चरर्स Infineon Technologies 
लोगो Infineon Technologies लोगो 
पूर्व दर्शन
1 Page
		
<?=IPD068P03L3G?> डेटा पत्रक पीडीएफ

IPD068P03L3G pdf
Parameter
Thermal characteristics
Thermal resistance,
junction - case
Thermal resistance,
junction - ambient
Symbol Conditions
IPD068P03L3 G
min.
Values
typ.
Unit
max.
R thJC
R thJA 6 cm2 cooling area2)
-
-
- 1.5 K/W
- 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=-250mA
-30
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=-150 µA -1.0 -1.5 -2.0
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
I DSS
I GSS
V DS=-30 V, V GS=0 V,
T j=25 °C
V DS=-30 V, V GS=0 V,
T j=150 °C
V GS=-20 V, V DS=0 V
R DS(on) V GS=-4.5 V, I D=-45 A
-
-
-
-
-0.1 -1 µA
-10 -100
-10 -100 nA
7.0 11.0 mW
Gate resistance
Transconductance
V GS=-10 V, I D=-70 A
-
5.0 6.8
R G - 5.8 - W
g fs
|V DS|>2|I D|R DS(on)max,
I D=-70 A
50
100
-S
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.1
page 2
2014-05-16

विन्यास 9 पेज
डाउनलोड[ IPD068P03L3G Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IPD068P03L3GPower-TransistorInfineon Technologies
Infineon Technologies


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