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IPB80N06S2L-09 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power-Transistor - Infineon Technologies

भाग संख्या IPB80N06S2L-09
समारोह Power-Transistor
मैन्युफैक्चरर्स Infineon Technologies 
लोगो Infineon Technologies लोगो 
पूर्व दर्शन
1 Page
		
<?=IPB80N06S2L-09?> डेटा पत्रक पीडीएफ

IPB80N06S2L-09 pdf
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area5)
IPB80N06S2L-09
IPP80N06S2L-09
min.
Values
typ.
Unit
max.
- - 0.8 K/W
- - 62
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Drain-source on-state resistance
V (BR)DSS V GS=0 V, I D= 1 mA
V GS(th) V DS=V GS, I D=125 µA
I DSS
V DS=55 V, V GS=0 V,
T j=25 °C
V DS=55 V, V GS=0 V,
T j=125 °C2)
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=4.5 V, I D=52 A
V GS=4.5 V, I D=52 A,
SMD version
RDS(on) V GS=10 V, I D=52 A,
V GS=10 V, I D=52 A,
SMD version
55
1.2
-
-
-
-
-
-
-
- -V
1.6 2.0
0.01 1 µA
1 100
1 100 nA
8.4 11.3 m
8.1 11
6.9 8.5 m
6.6 8.2
Rev. 1.0
page 2
2006-03-13

विन्यास 8 पेज
डाउनलोड[ IPB80N06S2L-09 Datasheet.PDF ]


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