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8N50NZ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या 8N50NZ
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=8N50NZ?> डेटा पत्रक पीडीएफ

8N50NZ pdf
Package Marking and Ordering Information
Device Marking
FDP8N50NZ
FDPF8N50NZ
Device
FDP8N50NZ
FDPF8N50NZ
Package
TO-220
TO-220F
Reel Size
Tube
Tube
Tape Width
N/A
N/A
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250A, VGS = 0V, TC = 25oC
ID = 250A, Referenced to 25oC
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125oC
VGS = ±25V, VDS = 0V
500
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250A
VGS = 10V, ID = 4A
VDS = 20V, ID = 4A
3.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V,ID = 8A
VGS = 10V
(Note 4)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 8A
RG = 25, VGS = 10V
(Note 4)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 8A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 8A
dIF/dt = 100A/s
-
-
-
-
-
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3.8mH, IAS = 8A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 8A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
Typ.
-
0.5
-
-
-
-
0.77
6.3
565
80
5
14
4
6
17
34
43
27
-
-
-
228
1.43
Quantity
50 units
50 units
Max. Unit
-V
- V/oC
1
10
A
±10 A
5.0 V
0.85
-S
735 pF
105 pF
8 pF
18 nC
- nC
- nC
45 ns
80 ns
95 ns
60 ns
8A
30 A
1.4 V
- ns
- C
©2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev. C2
2
www.fairchildsemi.com

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