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IRGS4056DPbF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRGS4056DPbF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRGS4056DPbF pdf
IRGS4056DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
Parameter
Collector-to-Emitter Breakdown Voltage
Min. Typ. Max. Units Conditions
f600 — — V VGE = 0V, IC = 100µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
— 0.30 — V/°C VGE = 0V, IC = 1mA (25°C-175°C)
— 1.55 1.85
IC = 12A, VGE = 15V, TJ = 25°C
VCE(on)
Collector-to-Emitter Saturation Voltage
— 1.90 —
V IC = 12A, VGE = 15V, TJ = 150°C
— 1.97 —
IC = 12A, VGE = 15V, TJ = 175°C
VGE(th)
Gate Threshold Voltage
4.0 — 6.5 V VCE = VGE, IC = 350µA
VGE(th)/TJ Threshold Voltage temp. coefficient
— -18 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C)
gfe Forward Transconductance
— 7.7 — S VCE = 50V, IC = 12A, PW = 80µs
ICES
Collector-to-Emitter Leakage Current
— 2.0 25 µA VGE = 0V, VCE = 600V
— 475 —
VGE = 0V, VCE = 600V, TJ = 175°C
VFM Diode Forward Voltage Drop
— 2.10 3.10 V IF = 12A
— 1.61 —
IF = 12A, TJ = 175°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Ref.Fig
CT6
CT6
5,6,7
9,10,11
9, 10,
11, 12
8
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig
Qg Total Gate Charge (turn-on)
— 25 38
IC = 12A
24
Qge Gate-to-Emitter Charge (turn-on)
— 7.0 11 nC VGE = 15V
CT1
Qgc Gate-to-Collector Charge (turn-on)
— 11 16
VCC = 400V
Eon Turn-On Switching Loss
— 75 118
IC = 12A, VCC = 400V, VGE = 15V
CT4
Eoff Turn-Off Switching Loss
— 225 273 µJ RG = 22, L = 200µH, LS = 150nH, TJ = 25°C
Etotal
Total Switching Loss
— 300 391
Energy losses include tail & diode reverse recovery
td(on)
Turn-On delay time
— 31 40
IC = 12A, VCC = 400V, VGE = 15V
CT4
tr Rise time
— 17 24 ns RG = 22, L = 200µH, LS = 150nH, TJ = 25°C
td(off)
Turn-Off delay time
— 83 94
tf Fall time
— 24 31
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
— 185 —
IC = 12A, VCC = 400V, VGE=15V
13, 15
— 355 — µJ RG=22, L=100µH, LS=150nH, TJ = 175°C
CT4
Etotal
Total Switching Loss
— 540 —
Energy losses include tail & diode reverse recovery
WF1, WF2
td(on)
Turn-On delay time
— 30 —
IC = 12A, VCC = 400V, VGE = 15V
14, 16
tr Rise time
— 18 — ns RG = 22, L = 200µH, LS = 150nH
CT4
td(off)
Turn-Off delay time
— 102 —
TJ = 175°C
WF1
tf Fall time
— 41 —
WF2
Cies Input Capacitance
— 765 — pF VGE = 0V
23
Coes Output Capacitance
— 52 —
VCC = 30V
Cres Reverse Transfer Capacitance
— 23 —
f = 1.0Mhz
TJ = 175°C, IC = 48A
4
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 480V, Vp =600V
CT2
Rg = 22, VGE = +15V to 0V
SCSOA
Short Circuit Safe Operating Area
5 — — µs VCC = 400V, Vp =600V
22, CT3
Rg = 22, VGE = +15V to 0V
WF4
Erec
Reverse Recovery Energy of the Diode
— 280 — µJ TJ = 175°C
17, 18, 19
trr Diode Reverse Recovery Time
— 68 — ns VCC = 400V, IF = 12A
20, 21
Irr Peak Reverse Recovery Current
— 19 — A VGE = 15V, Rg = 22, L =200µH, Ls = 150nH
WF3
Notes:
 VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 22.
‚ This is only applied to TO-220AB package.
ƒ Pulse width limited by max. junction temperature.
„ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
2
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