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VS-25MT060WFAPbF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT MTP - Vishay

भाग संख्या VS-25MT060WFAPbF
समारोह IGBT MTP
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=VS-25MT060WFAPbF?> डेटा पत्रक पीडीएफ

VS-25MT060WFAPbF pdf
www.vishay.com
VS-25MT060WFAPbF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Collector to emitter breakdown voltage
V(BR)CES
Temperature coefficient of breakdown voltage V(BR)CES/TJ
VGE = 0 V, IC = 250 μA
VGE = 0 V, IC = 4 mA (25 °C to 125 °C)
600
-
VGE = 15 V, IC = 25 A
-
Collector to emitter saturation voltage
VCE(on)
VGE = 15 V, IC = 50 A
VGE = 15 V, IC = 25 A, TJ = 150 °C
-
-
VGE = 15 V, IC = 50 A, TJ = 150 °C
-
Gate threshold voltage
Temperature coefficient of threshold voltage
Transconductance
VGE(th)
VGE(th)/TJ
gfe
Zero gate voltage collector current
ICES (1)
Gate to emitter leakage current
IGES
Diode forward voltage drop
VFM
Note
(1) ICES includes also opposite leg overall leakage
VCE = VGE, IC = 250 μA
VCE = VGE, IC = 250 μA (25 °C to 125 °C)
VCE = 100 V, IC = 25 A, PW = 80 μs
VGE = 0 V, VCE = 600 V, TJ = 25 °C
VGE = 0 V, VCE = 600 V, TJ = 150 °C
VGE = ± 20 V
IC = 25 A
IC = 50 A
IC = 25 A; TJ = 150 °C
IC = 50 A; TJ = 150 °C
3
-
-
-
-
-
-
-
-
-
TYP.
-
+ 0.6
2.22
2.43
1.65
2.08
-
- 17
43
-
-
-
1.36
1.57
1.19
1.48
MAX. UNITS
-V
- V/°C
3.14
3.25
1.93 V
2.45
6
- mV/°C
-S
250 μA
10 mA
± 250 nA
1.64
1.93
V
1.42
1.80
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery time
Diode peak reverse current
Diode Recovery charge
Diode peak rate of fall of
recovery during tb
Qg
Qge
Qgc
Eon
Eoff
Etot
Eon
Eoff
Etot
Cies
Coes
Cres
trr
Irr
Qrr
dI(rec)M/dt
IC = 25 A
VCC = 480 V
VGE = 15 V
Rg = 5 , IC = 25 A
VCC = 480 V
VGE = ± 15 V, TJ = 25 °C
Rg = 5 , IC = 25 A
VCC = 480 V
VGE = ± 15 V, TJ = 125 °C
VGE = 0 V
VCC = 30 V
f = 1.0 MHz
VR = 200 V;
IC = 25 A;
dI/dt = 200 A/μs
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
175
27
71
0.13
0.42
0.55
0.39
0.49
0.88
3610
714
58
50
4.5
112
MAX.
263
41
107
0.20
0.62
0.82
0.59
0.74
1.32
5415
1071
87
-
-
-
UNITS
nC
mJ
pF
ns
A
nC
- 250 - A/μs
Revision: 30-Oct-13
2 Document Number: 94539
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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