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VS-20MT120UFAPbF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT MTP - Vishay

भाग संख्या VS-20MT120UFAPbF
समारोह IGBT MTP
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=VS-20MT120UFAPbF?> डेटा पत्रक पीडीएफ

VS-20MT120UFAPbF pdf
www.vishay.com
VS-20MT120UFAPbF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
V(BR)CES
Temperature coefficient of breakdown voltage V(BR)CES/TJ
Collector to emitter saturation voltage
VCE(on)
VGE = 0 V, IC = 250 μA
VGE = 0 V, IC = 3 mA (25 to 125 °C)
VGE = 15 V, IC = 20 A
VGE = 15 V, IC = 40 A
VGE = 15 V, IC = 20 A, TJ = 125 °C
VGE = 15 V, IC = 40 A, TJ = 125 °C
VGE = 15 V, IC = 20 A, TJ = 150 °C
Gate threshold voltage
Temperature coefficient of threshold voltage
VGE(th)
VGE(th)/TJ
VCE = VGE, IC = 250 μA
VCE = VGE, IC = 3 mA (25 to 125 °C)
Transconductance
gfe VCE = 50 V, IC = 20 A, PW = 80 μs
Zero gate voltage collector current
ICES (1)
VGE = 0 V, VCE = 1200 V, TJ = 25 °C
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
VGE = 0 V, VCE = 1200 V, TJ = 150 °C
Gate to emitter leakage current
Note
(1) ICES includes also opposite leg overall leakage
IGES
VGE = ± 20 V
MIN.
1200
-
-
-
-
-
-
4
-
-
-
-
-
-
TYP.
-
+ 1.3
3.29
4.42
3.87
5.32
3.99
-
- 14
17.5
-
0.7
2.9
-
MAX. UNITS
-V
- V/°C
3.59
4.66
4.11
V
5.70
4.27
6
- mV/°C
-S
250 μA
3.0
mA
9.0
± 250 nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Reverse bias safe operating area
Short circuit safe operating area
Qg
Qge
Qgc
Eon
Eoff
Etot
Eon
Eoff
Etot
Cies
Coes
Cres
RBSOA
SCSOA
IC = 20 A
VCC = 600 V
VGE = 15 V
VCC = 600 V, IC = 20 A, VGE = 15 V,
Rg = 5 , L = 200 μH, TJ = 25 °C,
energy losses include tail and
diode reverse recovery
VCC = 600 V, IC = 20 A, VGE = 15 V,
Rg = 5 , L = 200 μH, TJ = 125 °C,
energy losses include tail and
diode reverse recovery
VGE = 0 V
VCC = 30 V
f = 1.0 MHz
TJ = 150 °C, IC = 120 A
VCC = 1000 V, Vp = 1200 V
Rg = 5 , VGE = + 15 V to 0 V
TJ = 150 °C
VCC = 900 V, Vp = 1200 V
Rg = 5 , VGE = + 15 V to 0 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
176
19
89
0.513
0.402
0.915
0.930
0.610
1.540
2530
344
78
MAX. UNITS
264
30 nC
134
0.770
0.603
1.373
1.395
mJ
0.915
2.310
3790
516 pF
117
Fullsquare
10 -
- μs
Revision: 30-Oct-13
2 Document Number: 94470
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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